IRG4IBC20WPBF Allicdata Electronics
Allicdata Part #:

IRG4IBC20WPBF-ND

Manufacturer Part#:

IRG4IBC20WPBF

Price: $ 0.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 12A 34W TO220FP
More Detail: IGBT 600V 12A 34W Through Hole TO-220AB Full-Pak
DataSheet: IRG4IBC20WPBF datasheetIRG4IBC20WPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.75000
10 +: $ 0.72750
100 +: $ 0.71250
1000 +: $ 0.69750
10000 +: $ 0.67500
Stock 1000Can Ship Immediately
$ 0.75
Specifications
Power - Max: 34W
Supplier Device Package: TO-220AB Full-Pak
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 6.5A, 50 Ohm, 15V
Td (on/off) @ 25°C: 22ns/110ns
Gate Charge: 26nC
Input Type: Standard
Switching Energy: 60µJ (on), 80µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Current - Collector Pulsed (Icm): 52A
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRG4IBC20WPBF is a high voltage insulated gate bipolar transistor (IGBT). As a member of the IGBT family of transistors, the IRG4IBC20WPBF offers low conduction losses and fast switching speeds. It also offers a wide range of gate drive components and can easily be integrated into any system.

The IRG4IBC20WPBF belongs to the single IGBT family. This type of IGBT device is composed of two MOSFETs (metal-oxide-semiconductor field-effect transistors) in one package. This provides good representation of the IGBT\'s off-state and on-state resistances. The advantage of the single IGBT device is that it is easily integrated into circuit designs, offers fast switching speeds and low power dissipation.

The IRG4IBC20WPBF has many applications, including drivelines, robots and industrial motor control. It is also used for motor control in consumer electronics, such as air conditioners, washing machines, and vacuum cleaners. The IGBT is also found in resonant converters and pulse width modulation (PWM) systems.

The IRG4IBC20WPBF works by using a voltage source to control the flow of current through the transistor. This is accomplished by changing the voltage at the gate terminal. When a positive voltage is applied at the gate, the MOSFETs turn on and current is allowed to flow through the IGBT. When the voltage is reversed, the MOSFETs turn back off and current is no longer allowed to flow. The gate voltage must be higher than the threshold voltage in order for the device to turn on.

In the on-state, the IRG4IBC20WPBF conducts current and low on-state losses are achieved through its fast switching of the IGBT from on to off and vice versa. This results in improved efficiency and power density. The device also features a very low reverse-blocking voltage, which provides a level of protection for the gate drive circuit.

The IRG4IBC20WPBF also includes several protection features. These include over-temperature, under-voltage, over-voltage, reverse-blocking, and ESD protection. This ensures that the device will function in a safe and reliable manner.

The IRG4IBC20WPBF is a highly versatile device that is well suited for many applications. It offers a wide range of gate drive components, fast switching speeds, low on-state losses, and a low reverse-blocking voltage. It also features a number of safety features, making it an ideal choice for any application.

The specific data is subject to PDF, and the above content is for reference

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