IRG4IBC30FD Allicdata Electronics
Allicdata Part #:

IRG4IBC30FD-ND

Manufacturer Part#:

IRG4IBC30FD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 20.3A 45W TO220FP
More Detail: IGBT 600V 20.3A 45W Through Hole TO-220AB Full-Pa...
DataSheet: IRG4IBC30FD datasheetIRG4IBC30FD Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 45W
Supplier Device Package: TO-220AB Full-Pak
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 42ns
Test Condition: 480V, 17A, 23 Ohm, 15V
Td (on/off) @ 25°C: 42ns/230ns
Gate Charge: 51nC
Input Type: Standard
Switching Energy: 630µJ (on), 1.39mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 20.3A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IRG4IBC30FD Application Field and Working Principle

IRG4IBC30FD is a common type of Insulated Gate Bipolar Transistor (IGBT), which is a voltage-controlled semiconductor device that combines the properties of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and bipolar transistors. The IGBT is suitable for switching applications up to 6.5 kV and frequencies of several hundred kilohertz. It is widely used in commercial and industrial power conversion applications such as motor speed control, inverter circuits and power supplies.

IGBTs, like other power semiconductor devices, are designed for power control. They work by using a voltage source to control the flow of a current source, unlike other transistors which use a current source to control the flow of a voltage source. This makes it much easier to control the output power.

The IRG4IBC30FD is a single IGBT module. It is designed for high power applications, and is able to handle large current capacity up to 31A and current density up to 40A/cm 2. It also has a high maximum blocking voltage of 6.5kV and low forward voltage drop of typically 1.6 V. It has a short turn-off time and is suitable for switching frequencies up to several hundred kilohertz with excellent EMI/RFI filtering performance. The device also has a built-in fast-recovery body diode, which helps reduce switching losses.

The working principle of the IRG4IBC30FD can be understood in terms of the three regions of operation. The first is the cut-off region, which is when the device is not conducting and the gate voltage is zero. This means that the gate does not control the current flow, and the transistor is off. The second region is the linear region, which is when the gate voltages is between the gate-emitter threshold voltage and the gate-source voltage. In this region, the device is acting as a constant current source, and is able to control the current flow. Finally, the saturation region is when the gate voltages is greater than the gate-source voltage. Here, the transistor is operating as a constant voltage source, and is able to control the voltage across the device.

The IRG4IBC30FD is a reliable and efficient power device and is widely used in a variety of commercial and industrial applications. It is an excellent choice for power conversion, motor speed control, and power supplies. The device’s short switching time and low gate voltages make it ideal for high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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