IRG4P254S

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The IRG4P254S is a high voltage insulated gate bipolar transistor (IGBT) module designed to provide excellent performance. It is ideal for switching applications in motor drives, power supplies, and renewable energy systems. The IRG4P254S is a single IGBT type module that includes a fast-recovery diodes, gate drive circuit and short-circuit protection circuit. It is available in a standard QFN package and supports a wide range of voltages and current ratings.

The IRG4P254S is designed for a wide range of applications, including medium and high-speed power switches. The IGBT module combines high switching efficiency, fast switching speed, and soft switching capability. This makes it an ideal choice for applications ranging from low to medium power IGBT-based circuits.

The IRG4P254S has a continuous drain current rating of up to 25A and an on-resistance as low as 1Ω. This makes it ideal for operating under high current loads. In addition, the on-resistance varies very little over the full range of temperatures, which results in excellent thermal stability and durability. The module also has a high peak current capability of up to 200A. The peak current rating is dependent on the operational temperature, but can be further extended when the module is over-rated. In that case, the peak current capacity increases to up to 300A.

The IRG4P254S module is equipped with a fast-recovery diode, which provides a high level of circuit protection against current spikes, which can damage other components in the circuit. This feature ensures a more reliable operation by protecting components from damage due to transient load changes.

The IRG4P254S module features a built-in gate drive circuit, allowing for operation at high switching frequencies with a minimum of external components. The gate drive is designed for low-power applications and features over-voltage protection. It also has a built-in short-circuit protection circuit, which helps protect the driver circuit from damage due to over-current conditions.

The IRG4P254S is a single-IGBT module designed for applications requiring a high power density. It offers excellent switching performance and is capable of withstanding high currents, making it ideal for medium and high-power applications. The module is also highly reliable and has a wide range of voltages and current ratings, providing excellent flexibility for different applications.

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