IRG4PSC71KDPBF Allicdata Electronics
Allicdata Part #:

IRG4PSC71KDPBF-ND

Manufacturer Part#:

IRG4PSC71KDPBF

Price: $ 12.80
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 85A 350W SUPER247
More Detail: IGBT 600V 85A 350W Through Hole SUPER-247 (TO-274...
DataSheet: IRG4PSC71KDPBF datasheetIRG4PSC71KDPBF Datasheet/PDF
Quantity: 92
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 11.62980
10 +: $ 10.68860
100 +: $ 9.02713
Stock 92Can Ship Immediately
$ 12.8
Specifications
Power - Max: 350W
Supplier Device Package: SUPER-247 (TO-274AA)
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 82ns
Test Condition: 480V, 60A, 5 Ohm, 15V
Td (on/off) @ 25°C: 82ns/282ns
Gate Charge: 340nC
Input Type: Standard
Switching Energy: 3.95mJ (on), 2.33mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 85A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Introduction

The IRG4PSC71KDPBF is an Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies AG. This is a voltage-controlled, single-channel IGBT which is designed for high-case temperature automotive applications. It is produced in a TO-247 N-channel planar IGBT package, which is designed to provide improved thermal and mechanical performance.

Application field

The IRG4PSC71KDPBF is designed for automotive applications and motor control. It is capable of providing high speed, fast switching, and efficiency for a wide range of automobile and industrial applications. It has been engineered for high temperature operation and is capable of operating up to 175°C junction temperatures. It features an anti-parallel diode to support fast reverse recovery.

Some of the applications that the IRG4PSC71KDPBF are well-suited for include vehicle braking, power window drives in automobiles, and air conditioning systems. Additionally, it can be used for motor control applications such as washing machines, dishwashers, and speed control applications.

Working principle

The IRG4PSC71KDPBF utilizes the principle of a voltage-controlled IGBT, which is a three layer device consisting of an insulated gate, a drift region, and a body region. When a positive voltage is applied to the gate of the transistor, the gate-emitter region of the device becomes conductive, allowing current to flow through the device. This is known as the forward bias of the IGBT.

When the positive voltage applied to the gate of the IGBT is removed, the gate-emitter region of the device becomes non-conductive, and current stops flowing through the device. This is known as the reverse bias of the IGBT. This feature makes the IGBT highly efficient for applications such as motor control and voltage conversion applications.

The IRG4PSC71KDPBF also features an anti-parallel diode for fast reverse recovery. This feature provides fast switching speeds and improved efficiency by preventing voltage spikes in the reverse direction of the device. The diode also helps to reduce voltage drop, which further increases efficiency in the application.

Conclusion

The IRG4PSC71KDPBF is a single-channel IGBT designed for high-case temperature automotive applications. It is capable of providing high speed, fast switching, and efficiency for a wide range of automobile and industrial applications. Its voltage-controlled design and anti-parallel diode provide fast switching and improved efficiency.

The specific data is subject to PDF, and the above content is for reference

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