IRG4PSH71KPBF Allicdata Electronics
Allicdata Part #:

IRG4PSH71KPBF-ND

Manufacturer Part#:

IRG4PSH71KPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 78A 350W SUPER247
More Detail: IGBT 1200V 78A 350W Through Hole SUPER-247 (TO-27...
DataSheet: IRG4PSH71KPBF datasheetIRG4PSH71KPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 350W
Supplier Device Package: SUPER-247 (TO-274AA)
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 42A, 5 Ohm, 15V
Td (on/off) @ 25°C: 45ns/220ns
Gate Charge: 410nC
Input Type: Standard
Switching Energy: 2.35mJ (on), 3.14mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A
Current - Collector Pulsed (Icm): 156A
Current - Collector (Ic) (Max): 78A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IRG4PSH71KPBF transistor is a popular type of insulation-gate bipolar transistor (IGBT). IGBTs are a type of semiconductor that is used in many electronics applications. The IRG4PSH71KPBF is part of a family of single IGBTs that are used in various applications and offer greatly improved switching performance and higher reliability.

The device can be classified as a single IGBT due to its single-terminal switching structure and its low-on-state voltage losses. An IGBT is basically a combination of a MOSFET and a bipolar junction transistor (BJT). It has the advantage of a wider range of applications while providing very low on-state voltage losses. This makes the IRG4PSH71KPBF a popular choice for power conversion and motor control applications.

The working principle of the device is based on the transfer of electrons across the base region. When a high current is applied to the IGBT\'s gate terminal, the electrons are attracted towards the collector and the device is activated. When the current stops, the electrons are repelled away from the collector and the device is turned off. This process is repeated when the current is reversed, enabling the device to act as a switch.

Due to its low on-state voltage losses, the IRG4PSH71KPBF is suitable for a wide range of applications. It is often used for power conversion, motor control, motor drives, industrial motor control, inverter drives, UPS systems and solar power systems. The device can also be used in applications such as electric vehicle controls, telecom power amplifiers and audio amplifiers.

The device has a wide operating temperature range of -40°C to 150°C and a maximum junction temperature of 175°C. It is capable of switching at output currents of up to 30A and can handle a peak current of over 60A. The device also features short-circuit protection and has built-in EMI filters.

The IRG4PSH71KPBF is a popular choice for various applications that require high efficiency and low losses. Thanks to its ability to switch quickly, accurately and with low losses, the device is highly reliable and efficient. It is suitable for a wide range of applications and offers greatly improved switching performance and higher reliability.

The specific data is subject to PDF, and the above content is for reference

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