
Allicdata Part #: | IRG4PSH71U-ND |
Manufacturer Part#: |
IRG4PSH71U |
Price: | $ 11.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 99A 350W SUPER247 |
More Detail: | IGBT 1200V 99A 350W Through Hole SUPER-247 (TO-27... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
50 +: | $ 10.75940 |
Power - Max: | 350W |
Supplier Device Package: | SUPER-247 (TO-274AA) |
Package / Case: | TO-274AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 960V, 70A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 51ns/280ns |
Gate Charge: | 370nC |
Input Type: | Standard |
Switching Energy: | 4.77mJ (on), 9.54mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 70A |
Current - Collector Pulsed (Icm): | 200A |
Current - Collector (Ic) (Max): | 99A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The International Rectifier IGBT IG4PSH71U has become a popular choice among engineers because of its ease of use and compatibility with a wide variety of applications. As part of the single IGBT family, this device offers a variety of features and benefits that can be utilized in a range of industries. This article will discuss the application field and working principle of the IRG4PSH71U IGBT.
Application Field of the IRG4PSH71U IGBT
The IRG4PSH71U IGBT is primarily used in power switching, motor control, and residential and industrial applications. This IGBT can be used in a variety of circumstances and is a good choice for applications requiring high performance and low power loss. This makes it an ideal option for those wanting to create higher energy efficiency in the products that they are designing.
The excellent switching characteristics of the IRG4PSH71U is also a key feature of this device. It has an extremely low on-state voltage drop and excellent switching characteristics. This means that it is capable of operating at high switching frequencies and is suitable for fast switching applications.
Working Principle of the IRG4PSH71U IGBT
The IRG4PSH71U IGBT uses a voltage-driven MOSFET to control the conduction of current. In the “on” state the device is controlled by a particular gate voltage, typically a few volts in magnitude. When the gate voltage is increased, the voltage between the emitter and collector increases and current is conducted. When the gate voltage is decreased, the voltage between the emitter and collector decreases, and the device enters the “off” state, ceasing conduction.
This voltage-driven MOSFET is a key component of the IGBT. It is a three-terminal device, where one terminal is the gate, another is the source, and the third is the drain. By applying the appropriate gate voltage and selecting the correct threshold voltage, the device can be switched “on.” Conversely, switching to the “off” state is accomplished by decreasing the gate voltage. In the “off” state, there is no conduction across the drain to the source, thus no electrical power is transferred.
IRG4PSH71U also utilizes a low forward gate drive voltage for optimal performance. The voltage required to switch between the “on” and “off” states is less than 1.2 VDC. This low voltage is needed to reduce the switching losses normally associated with higher voltage devices.
A final note, the IRG4PSH71U IGBT can be used in both positive and negative temperature applications, due to its high sensitivity to temperature. Its ability to remain stable through a wide temperature range (from -40°C to +125°C) makes it a great device for many applications where reliability is vital.
Conclusion
The IRG4PSH71U IGBT is a single IGBT that offers an array of features and benefits for use in a variety of applications. Its ease of use and compatibility with a wide range of requirements make it an optimal choice for those seeking higher energy efficiency and performance in their products. The IGBT works by using a voltage-driven MOSFET to control current, and requires a low forward gate drive voltage for optimal operation. Finally, the IRG4PSH71U also has the capability to perform in both positive and negative temperature settings.
The specific data is subject to PDF, and the above content is for reference
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