IRG4PSH71UD

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The IRG4PSH71UD is a high speed, power switching insulated gate bipolar transistor (IGBT) which is designed for use in applications such as high frequency switching power supplies, motor drives, and power amplifiers. This type of IGBT is made from an N-channel MOSFET and a P-channel MOSFET integrated in a single device, with the MOSFETs connected in a common emitter configuration. It has a low gate drive current, and high blocking voltage, making it suitable for applications requiring high input power.

The IRG4PSH71UD is a single IGBT chip with a maximum blocking voltage of 600V, and a current carrying capacity of 15A. It has a small footprint and a low on-state voltage drop, making it ideal for applications requiring high efficiency and efficiency. It is available in various packages, ranging from SOIC to QFP, and can be used with a wide range of gate drivers, due to its flexibility. The chip also has low EMI, which makes it suitable for use in noise sensitive applications.

The IGBT chip works by applying a voltage to the gate terminal to turn on the gate switching electrode, which enables current to flow between the two terminals. This creates a current path between the two terminal points, allowing current to flow. When the gate switching action is reversed, current is blocked between the two terminal points and the IGBT is turned off. This type of device is well-suited for high-frequency applications, as the ability to quickly switch on and off allows for greater control.

The IRG4PSH71UD is a very useful device in a wide range of applications, due to its high switching speed, low on-state voltage drop, and compatibility with a wide range of drivers. It is an excellent choice for applications requiring high power switching, such as motor drives and power amplifiers, as it provides a reliable and efficient solution. Additionally, its low EMI makes it suitable for use in noise sensitive applications, and its small footprint makes it ideal for applications with limited space.

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