IRG4PSH71UDPBF Allicdata Electronics
Allicdata Part #:

IRG4PSH71UDPBF-ND

Manufacturer Part#:

IRG4PSH71UDPBF

Price: $ 11.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 99A 350W SUPER247
More Detail: IGBT 1200V 99A 350W Through Hole SUPER-247 (TO-27...
DataSheet: IRG4PSH71UDPBF datasheetIRG4PSH71UDPBF Datasheet/PDF
Quantity: 16
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 10.52730
10 +: $ 9.67680
100 +: $ 8.17257
Stock 16Can Ship Immediately
$ 11.58
Specifications
Power - Max: 350W
Supplier Device Package: SUPER-247 (TO-274AA)
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 110ns
Test Condition: 960V, 70A, 5 Ohm, 15V
Td (on/off) @ 25°C: 46ns/250ns
Gate Charge: 380nC
Input Type: Standard
Switching Energy: 8.8mJ (on), 9.4mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 99A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IRG4PSH71UDPBF is an insulated gate bipolar transistor (IGBT) optimized for medium voltage applications and provides a wide working range. It offers superior performance in a broad range of applications, including industrial motor control, uninterruptible power supply, frequency converters and UPS systems, power management, and welding equipment. This article will discuss the application field and working principle of the IRG4PSH71UDPBF.

The IRG4PSH71UDPBF is specifically designed for use in medium voltage applications due to its capability to withstand a greater amount of voltage than standard transistors. It also has a higher switching frequency than traditional IGBTs, allowing it to be used in high frequency applications such as motor control and frequency converters. The IRG4PSH71UDPBF can also be used in a wide variety of other application fields, including uninterruptible power supplies, power management systems, welding equipment, and more.

The IRG4PSH71UDPBF is a single-level IGBT, meaning that it has a single on/off state. This IGBT operates with the bipolar junction transistor structure, allowing the device to be switched on and off faster than traditional transistors. The gate voltage of the device controls the on/off state and the flow of current through the IGBT. When the device is in the off state, no current will flow. When the device is switched on, current flows through the device in the direction that is determined by the polarity of the gate voltage.

The IRG4PSH71UDPBF has a number of features that make it an attractive choice for medium voltage applications. The device has a low loss of forward conduction, low switching losses, and a low on-state voltage drop, allowing it to be used at high frequency applications. It also has a low reverse recovery time, meaning that less power is wasted when switching the device on or off.

The IRG4PSH71UDPBF is capable of working at up to 1200 VDC, making it an ideal choice for medium voltage applications. It also has a high current carrying capacity, allowing it to be used in applications where large amounts of current must be switched. It can also be used in high frequency applications, due to its low loss of forward conduction and low switching losses.

The IRG4PSH71UDPBF is specifically designed for use in medium voltage applications and provides superior performance in a number of applications. This single level IGBT has a low loss of forward conduction, low switching losses, low on-state voltage drop, and a low reverse recovery time. It also has a high current carrying capacity and is capable of working at up to 1200 VDC, making it an ideal choice for medium voltage applications.

The specific data is subject to PDF, and the above content is for reference

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