IRG4RC10KD Allicdata Electronics
Allicdata Part #:

IRG4RC10KD-ND

Manufacturer Part#:

IRG4RC10KD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 9A 38W DPAK
More Detail: IGBT 600V 9A 38W Surface Mount D-Pak
DataSheet: IRG4RC10KD datasheetIRG4RC10KD Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 38W
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 28ns
Test Condition: 480V, 5A, 100 Ohm, 15V
Td (on/off) @ 25°C: 49ns/97ns
Gate Charge: 19nC
Input Type: Standard
Switching Energy: 250µJ (on), 140µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
Current - Collector Pulsed (Icm): 18A
Current - Collector (Ic) (Max): 9A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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An International Rectifier Gen 4 RC Series IGBT (Insulated Gate Bipolar Transistor) module is a power device that is used in a number of applications such as motor drives, renewable energy and transportation. The IRG4RC10KD is a high voltage, high current power device with a wide range of applications.

The IRG4RC10KD features two field-effect transistors (FETs), an N-channel FET and a P-channel FET. The FETs are connected in a half-bridge configuration, meaning the two FETs are opposite to each other. The N-channel FET is the top FET, and the P-channel FET is the bottom transistor. The N-channel FET carries current from the source to the load, while the P-channel carries current from the load to the source. Both FETs are controlled by a gate drive signal.

The IRG4RC10KD is a high current device and can handle up to 10A steady state. It has a voltage rating of 600V and a maximum junction temperature of 175°C. The device is protected against short-circuiting, over-temperature and over-voltage conditions.

In addition to the field-effect transistors, the IRG4RC10KD also contains an insulated gate bipolar transistor (IGBT). The IGBT is connected in a three-phase bridge configuration and is responsible for controlling the flow of current from the DC source to the load. The IGBT is controlled by a gate drive signal, which is used to turn the device on and off. The IGBT also provides protection against short-circuiting, over-temperature and over-voltage conditions.

The IRG4RC10KD can be used in many applications, such as motor drives, renewable energy, transportation, and industrial control. It is a high current device, so it is well suited for applications where high current operations are required. The device has a wide operating temperature range, making it suitable for a wide variety of applications. The device is also protected against short-circuiting, over-temperature and over-voltage conditions, making it a reliable and robust solution for use in harsh environments.

The IRG4RC10KD can be used in a variety of applications, such as motor drives, renewable energy, transportation, and industrial control. It is a high-current device and can handle up to 10A of current, so it is well suited for high current applications. The device has a wide operating temperature range, making it suitable for many different applications. The device also provides protection against short-circuiting, over-temperature and over-voltage conditions, making it a reliable and robust solution for use in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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