IRG4RC10UDPBF Allicdata Electronics
Allicdata Part #:

IRG4RC10UDPBF-ND

Manufacturer Part#:

IRG4RC10UDPBF

Price: $ 0.61
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 8.5A 38W DPAK
More Detail: IGBT 600V 8.5A 38W Surface Mount D-Pak
DataSheet: IRG4RC10UDPBF datasheetIRG4RC10UDPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.55573
Stock 1000Can Ship Immediately
$ 0.61
Specifications
Switching Energy: 140µJ (on), 120µJ (off)
Base Part Number: IRG4RC10UDPBF
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 28ns
Test Condition: 480V, 5A, 100 Ohm, 15V
Td (on/off) @ 25°C: 40ns/87ns
Gate Charge: 15nC
Input Type: Standard
Series: --
Power - Max: 38W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Current - Collector Pulsed (Icm): 34A
Current - Collector (Ic) (Max): 8.5A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IRG4RC10UDPBF is a standard, single IGBT with overcurrent protection (OVP) normally used in power electronic appliances such as motor drives, solar inverters, lighting systems, etc.

The main features of this device include a rugged current carrying capability with low power dissipation and low gate drive power requirements. It also offers superior short-circuit withstand capabilities, a higher power bandwidth, and a greater on/off ratio.

This device is mainly used in applications that require high switching frequencies, and low switching losses. This device is ideal for variable speed drives, solar inverters, and all types of solid-state lighting applications.

The working principle of this device is relatively simple. It consists of an N--type MOSFET and a P--type MOSFET on the same chip. The P--type MOSFET functions as the gate, and the N--type MOSFET functions as the collector. When the gate voltage is increased, the current is increased, causing a decrease in the voltage drop across the device and an increase in the voltage drop across the load.

The device has a built-in overcurrent protection (OVP) feature that provides circuit protection in the event of an overcurrent situation. When the current exceeds the set limit, the voltage across the load will drop and the OVP circuit will open, thus shutting off the power to the load.

In addition, the device has a high switching frequency with low switching losses and high di/dt capability. This is due to its low RDSon values, which enable a higher switching frequency and a lower dissipation. This makes the device ideal for applications such as motor drives, lighting systems, and high frequency switching applications.

This device is also characterized by its high current capability and low switching losses, due to its high current carrying capability and low on-resistance. The device is also characterized by its excellent temperature stability and robustness due to its low junction-temperature coefficient and low gate-bias current.

The IRG4RC10UDPBF is an ideal solution for applications that require high switching frequency, low switching losses, and high current carrying capability. It is typically used in motor drives, solar inverters, and other power electronic appliances. With its built-in OVP feature, the device provides improved circuit protection in the event of an overcurrent situation.

The specific data is subject to PDF, and the above content is for reference

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