IRG4RC10UTRPBF

Power - Max:	38W
Base Part Number:	IRG4RC10UPBF
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 5A, 100 Ohm, 15V
Td (on/off) @ 25°C:	19ns/116ns
Gate Charge:	15nC
Input Type:	Standard
Switching Energy:	80µJ (on), 160µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 5A
Current - Collector Pulsed (Icm):	34A
Current - Collector (Ic) (Max):	8.5A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Last Time Buy
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The IRG4RC10UTRPBF is a Single IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon. It is an advanced technology module optimized for high performance, high switching speed and high CV/CC ratio. The module consists of a 2 in 1 power semiconductor IGBT cell and integrated protection circuit with low losses, enabling it to be used in several applications.

Applications

The IRG4RC10UTRPBF has a wide range of applications, including industrial ac-dc drives, residential and commercial power conversion, solar and wind applications, electric vehicle battery charger systems and 3-phase inverters. It can also be used in repetitive and high frequency switching applications, since it has a high switching frequency and high trr (turn-off time reduction).Another application is in home appliances, such as washing machines, dishwashers, fans and other motor driven products. This Advanced module is also suitable for high speed electric motor control, and for use in electric welding systems for spot welding.

Features

The advanced module features a low voltage (450V) with a maximum collector-emitter voltage of 700V, a continuous collector current of 10A, turn-on time of 3µs, turn-off time of 5µs, gate drive current capacity of 80A, gate threshold voltage of 2.5V and maximum operating temperature of 150°C. It also has the ability to hold electric charges with a maximum charge of 1.2nC and has a temperature rating of -40°C to +150°C.

Working Principle

The IRG4RC10UTRPBF, being a single IGBT module, is a combination of both a bipolar transistor and a field effect transistor. It consists of two electrodes, called the anode (collector) and cathode (emitter), to which voltage is applied, and a gate terminal (control) which alters the turn-on time and off time of the transistor. When a voltage is applied between the collector and the emitter, a switching current can flow, depending on the driving voltage. When the module is activated, a small electrical current can pass through the device to turn it on, allowing the heavy current to pass from the collector to the emitter.When the voltage is interrupted, the dissipated power generated by the current is dissipated into a heat sink (specifically designed for this purpose) and the module is turned off. In the case of the IRG4RC10UTRPF, the integrated protection circuit prevents the transistor from over current and over voltage protection, while the dv/dt immune prevents overshoot or undershoot of the voltage applied to the gate-emitter junction.

Conclusion

In conclusion, the IRG4RC10UTRPBF is an advanced Single IGBT module optimized for high performance, switching speed, and CV/CC ratio. It is suitable for high speed motor control and switching applications, and residential and commercial power conversion applications. Through its integrated protection circuit, over current and over voltage protection is provided for the IGBT module, allowing for a dependable operation in harsh environments.

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