
Allicdata Part #: | IRG4RC10UTRR-ND |
Manufacturer Part#: |
IRG4RC10UTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 8.5A 38W DPAK |
More Detail: | IGBT 600V 8.5A 38W Surface Mount D-Pak |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Power - Max: | 38W |
Base Part Number: | IRG4RC10U |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 480V, 5A, 100 Ohm, 15V |
Td (on/off) @ 25°C: | 19ns/116ns |
Gate Charge: | 15nC |
Input Type: | Standard |
Switching Energy: | 80µJ (on), 160µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 5A |
Current - Collector Pulsed (Icm): | 34A |
Current - Collector (Ic) (Max): | 8.5A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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。The IRG4RC10UTRR IGBT is a single-base switching transistor designed to handle significantly higher currents than other standard transistors. It has a variety of applications and working principles. This article will provide a brief overview of the device\'s applications and working principles.
Applications of IRG4RC10UTRR
The main application of the IRG4RC10UTRR is its use as a power switch. It is often used to switch in between AC or DC voltages. Due to its high current handling capacity and the low-switch-on voltage, the device is commonly used in switchmode power supplies, motor drives, power converters, and many other industrial and consumer electronic devices.
Moreover, the IRG4RC10UTRR has low on-state loss and fast switching speed, making it ideal for high-frequency and high-power applications. It is also known for its robustness, providing excellent thermal resistance and reliable performance even in harsh environments. Therefore, the device is suitable for applications that require high performance and reliability such as automotive applications and uninterruptible power systems.
Working Principle of IRG4RC10UTRR
The IRG4RC10UTRR is a three-layer IGBT device, which comprises of an emitter, base, and collector. When a voltage is applied to the emitter and the collector, it creates a field between them, which results in current flow through the device. As the voltage applied across the base and the collector becomes larger than the on-state voltage, the transistor turns on and current can flow through the device. As the voltage decreases, the transistor switches off and the device is then placed in an off state.
The IRG4RC10UTRR has a high gain, that is, when a small current passes through the base, it results in a large current passing through the collector, making it suitable for high-power applications. It also has a high switching speed, which is an advantage when used in switching applications.
The device operates on a ‘Commutation’ principle, which enables two transistors to be used together to increase the efficiency of the system. This technique involves connecting two transistors in a certain arrangement such that one transistor can be turned on, while the other is in the off state. This arrangement helps reduce the switching losses, hence increasing the efficiency of the system.
Conclusion
The IRG4RC10UTRR is a single-base switching transistor robust enough to handle significantly higher currents than other standard transistors, making it ideal for various applications. The device also has low on-state loss and fast switching speed, making it suitable for high-frequency and high-power applications. Additionally, its Commutation principle allows two transistors to be used together to increase the efficiency of the system.
The specific data is subject to PDF, and the above content is for reference
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