IRGS4620DTRLPBF Allicdata Electronics
Allicdata Part #:

IRGS4620DTRLPBF-ND

Manufacturer Part#:

IRGS4620DTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 32A 140W D2PAK
More Detail: IGBT 600V 32A 140W Surface Mount D2PAK
DataSheet: IRGS4620DTRLPBF datasheetIRGS4620DTRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 75µJ (on), 225µJ (off)
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 68ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Td (on/off) @ 25°C: 31ns/83ns
Gate Charge: 25nC
Input Type: Standard
Series: --
Power - Max: 140W
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Current - Collector Pulsed (Icm): 36A
Current - Collector (Ic) (Max): 32A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRGS4620DTRLPBF is a type of Insulated Gate Bipolar Transistor (IGBT) in the Single category. It is a low-loss power device which is used largely in industrial and consumer applications. The IRGS4620DTRLPBF has a variety of features that make it popular for its application field. It has a high current rating, low on-state voltage, low gate drive requirements, and a high-speed switching capability. It is also capable of both linear and switching operations, making it a versatile device.

The IRGS4620DTRLPBF is ideal for use in applications such as motor control, computer-controlled UPS systems, switch mode power supplies, solar systems, and power electronics. Its low on-state voltage, high current rating, and simple gate drive requirements make it a good choice for these types of applications. In addition, its high-frequency capability makes it useful in applications requiring high-density or high-speed switching. This makes it suitable for a variety of applications, such as automotive and transportation.

The working principle behind the IRGS4620DTRLPBF is based on the principle of operation of an IGBT. It is essentially a combination of a MOSFET and a BJT. The MOSFET portion is used to control the on-state current while the BJT portion is used to control the on-state voltage. A P-channel MOSFET acts as the input, while the N-channel MOSFET acts as the output. The MOSFETs are coupled to the BJT, which acts as the voltage regulator. This allows for control of both the current and the voltage simultaneously.

The IRGS4620DTRLPBF also offers a low on-state voltage, which makes it a good choice for applications where voltage control is important. The low gate drive requirements make it suitable for applications where gate signal timing is critical. Additionally, the high-speed switching capability makes it highly accurate and reliable for applications that require precise switching operations. This makes it ideal for applications such as switch mode power supplies, motor control, computer-controlled UPS systems, and solar systems.

Overall, the IRGS4620DTRLPBF is an excellent choice for applications that require precise voltage and current control, high-speed switching capabilities, and low on-state voltage. Its combined MOSFET and BJT design allows it to achieve high-speed operations while still providing accurate voltage and current control. This makes it an ideal choice for a wide range of industrial, automotive, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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