IRGS4620DPBF Allicdata Electronics
Allicdata Part #:

IRGS4620DPBF-ND

Manufacturer Part#:

IRGS4620DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 32A 140W D2PAK
More Detail: IGBT 600V 32A 140W Surface Mount D2PAK
DataSheet: IRGS4620DPBF datasheetIRGS4620DPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 75µJ (on), 225µJ (off)
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 68ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Td (on/off) @ 25°C: 31ns/83ns
Gate Charge: 25nC
Input Type: Standard
Series: --
Power - Max: 140W
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Current - Collector Pulsed (Icm): 36A
Current - Collector (Ic) (Max): 32A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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The IRGS4620DPBF is a general-purpose device that belongs to a family of transistors known as IGBTs (Insulated Gate Bipolar Transistors) or "Single IGBTs". IGBTs are power devices which combine the best features of both MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) and bipolar transistors, providing a high current and voltage capability while boasting low on-state resistance characteristics.

The IRGS4620DPBF is a single IGBT device, featuring a 1000 Volts rating and 25 Amps current capability. It is specifically designed for power switching, motor control and lighting control applications where a low on-state resistance, high output current and fast switching speed are required.

The IRGS4620DPBF works on the principles of a field-mediated transistor. When a voltage is supplied to the gate terminal, which is insulated (hence the “I” designation) from the “source” terminal, the electric field applied to the gate oxide affects the current flowing from the source to the drain. This process is known as carrier injection, or “avalanche injection”.

The resulting enhanced current flow, combined with an increased voltage across the transistor lowers the on-state resistance of the device, allowing higher current to flow through it. This homogenous conduction results in faster switching times and, therefore, improved efficiency in the application.

At the same time, IGBTs are also known to be significantly less sensitive to the damage caused by voltage spikes, the consequence of regular switching. As the current running through the transistor is turned on and off faster, the occurrence of voltage spikes is greatly reduced, making the life-span of the device much longer.

It is this combination of low on-state resistance and fast switching capabilities that makes the IRGS4620DPBF a highly suitable device for medium and high voltage switching applications, such as motor control and lighting control. The device can also be used in low voltage, highcurrent applications, such as amplifiers and switched-mode power supplies.

The IRGS4620DPBF is manufactured by International Rectifier and is available in a TO-247 package. Despite its relatively small size, the device offers a high output current and fast switching speed, making it ideal for applications which require a high performance IGBT.

The specific data is subject to PDF, and the above content is for reference

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