IRGS4615DTRLPBF

Switching Energy:	70µJ (on), 145µJ (off)
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	60ns
Test Condition:	400V, 8A, 47 Ohm, 15V
Td (on/off) @ 25°C:	30ns/95ns
Gate Charge:	19nC
Input Type:	Standard
Series:	--
Power - Max:	99W
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 8A
Current - Collector Pulsed (Icm):	24A
Current - Collector (Ic) (Max):	23A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The IRGS4615DTRLPBF is a bipolar field-effect transistor (IGBT) device designed for use in power supplies, switch mode power supplies, AC and DC motor drives, and inverters. It is manufactured by International Rectifier, a global leader in power electronics technology. The device has a single gate, and its gate voltage is low (3V) so it can be used in low-voltage applications. The IGBT provides high switching performance and low on-state losses, making it an ideal choice for many high-power applications.The IRGS4615DTRLPBF is a 1200V/30A IGBT module with a low profile, fast switching, and low EMI noise. The device has a single gate and is offered in a TO-267 package. The single gate provides the flexibility of either P or N channel control of the output voltage, enabling high current and voltage control. The low profile package allows for easy installation in any system. The fast switching times and low on-state losses help ensure sustained power delivery and high efficiency.The IRGS4615DTRLPBF has a unique structure that allows for fast switching, low on-state losses, low EMI emissions and high ESD robustness. It utilizes a proprietary vapor phase diffusion process and has an active switching region insulated from the emitter. This ensures better control of current and voltage. The device also features an optimized latch-up protection structure which helps protect the device during high switching currents.The IRGS4615DTRLPBF’s working principle is as follows: when a gate voltage is applied through the single gate, the device is switched on and a current path is created between the emitter and collector pins allowing current to flow. In the on-state, the voltage drop is low and the power loss is minimized. When the gate voltage is removed, the device is turned off and current no longer flows, returning to its low on-state voltage. This power semiconductor device offers a high-power density and low on-state losses thus improving the overall efficiency of a system.The IRGS4615DTRLPBF is ideal for many high-power applications such as motor drives, power conversion, H-bridge applications, servers, and industrial automation and control systems. It can also be used in AC and DC motor control, switching and inverting circuits, and DC-to-DC converters. Furthermore, this device can be used in solid state relays, driver circuits, and IGBT-MOSFET half bridge circuits.In conclusion, the IRGS4615DTRLPBF is a versatile, high-performance IGBT device with a single gate and low gate voltage. It can be used in a variety of applications requiring high power switching and low on-state losses. It is ideally suited for motor drive, power conversion, industrial automation, and other high-power applications.

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