IRGS4607DTRRPBF Allicdata Electronics
Allicdata Part #:

IRGS4607DTRRPBF-ND

Manufacturer Part#:

IRGS4607DTRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 11A 58W D2PAK
More Detail: IGBT 600V 11A 58W Surface Mount D2PAK
DataSheet: IRGS4607DTRRPBF datasheetIRGS4607DTRRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 140µJ (on), 62µJ (off)
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 48ns
Test Condition: 400V, 4A, 100 Ohm, 15V
Td (on/off) @ 25°C: 27ns/120ns
Gate Charge: 9nC
Input Type: Standard
Series: --
Power - Max: 58W
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Current - Collector Pulsed (Icm): 12A
Current - Collector (Ic) (Max): 11A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRGS4607DTRRPBF is a type of single IGBT or insulated gate bipolar transistor. It has a Vces of 600V and an Ic of 47A and a maximum gate voltage of 25V. It is mainly used in applications such power conversion, switching power supplies, and inverters.

An IGBT is basically like a MOSFET, however, it also consists of a bipolar junction transistor (BJT) in addition to the traditional MOSFET structure. In simplified terms, an IGBT combines the fast switching speed of a MOSFET with the higher current carrying capabilities of a BJT. This makes the combination of an IGBT preferable for power control applications where high currents, voltages, and fast response times are needed.

IRGS4607DTRRPBF is an example of an isolated NPN IGBT. In simplified terms, it is an “N-channel” IGBT, which has an N-type channel (or “MOSFET region”) through which current can pass and a P-type emitter region that is separated by an insulator.

The working principle of IRGS4607DTRRPBF is that the Gate voltage controls the current flow through the IGBT. When the Gate voltage is positive, there are holes in the N-type channel, allowing the electrons to flow from the N-type channel to the P-type emitter region. This effectively creates a “short-circuit”, allowing current to flow. Conversely, when the Gate voltage is negative, the holes in the N-type channel are removed, and electrons cannot flow from the N-type channel to the emitter region, thus preventing current flow.

An important advantage of IRGS4607DTRRPBF is that it is able to switch on and off very quickly. This makes it a very desirable component in switching power converters, high-frequency amplifiers, and inverters. The device is also able to withstand large currents, enabling it to handle large energy transfers, making it suitable for applications such as motor drive systems and solar converters.

In summary, IRGS4607DTRRPBF is an isolated NPN IGBT that combines the advantages of both MOSFETs and BJTs. It has an impressive Vce of 600V and Ic of 47A and is capable of high switching speeds and high current carrying capabilities. This makes it ideal for applications such as power conversion, switching power supplies and inverters.

The specific data is subject to PDF, and the above content is for reference

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