IRGS4640DTRLPBF Allicdata Electronics
Allicdata Part #:

IRGS4640DTRLPBF-ND

Manufacturer Part#:

IRGS4640DTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE 600V 40A D2PAK
More Detail: IGBT 600V 65A 250W Surface Mount D2PAK
DataSheet: IRGS4640DTRLPBF datasheetIRGS4640DTRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 115µJ (on), 600µJ (off)
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 89ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 41ns/104ns
Gate Charge: 75nC
Input Type: Standard
Series: --
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Current - Collector Pulsed (Icm): 72A
Current - Collector (Ic) (Max): 65A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRGS4640DTRLPBF is a single insulated gate bipolar transistor (IGBT) manufactured by International Rectifier (IR). It is one of the most widely used transistors in the market, because of its reliable performance and low cost. This device has been designed to operate in high power applications, such as switching cell phone power amplifiers, motor control applications, and several other power control applications.

The IRGS4640DTRLPBF is a single IGBT transistor in a TO-247 package. It consists of a semiconductor body with four metal electrodes. The four electrodes are: collector, base, emitter and gate. The collector and emitter form the power terminals for the IGBT, while the base and gate are used to control the device conductivity. The gate is insulated from the power terminals by an oxide layer. The gate is used to control the device\'s current conduction. The device voltage drain source rating is 40 volts and the current drain is 17.2A.

The working principle of the IRGS4640DTRLPBF is based on a two-level power transistor structure known as the vertical IGBT. When the gate voltage is greater than the base-emitter voltage, the device is turned on and current will flow from the collector to the emitter. When the gate voltage is lower than the base-emitter voltage, the device is turned off and no current will flow from the collector to the emitter. Hence, by controlling the gate voltage, the device can be switched between conducting and non-conducting states. The device features a low on-state voltage drop at low current densities, as well as a fast switching speed.

The IRGS4640DTRLPBF has several applications, such as motor control, solar and low frequency power electronics, motor drive applications, motor speed control, and other general purpose switches. It is also used in electric vehicles, industrial motor drives and switching cell phone RF amplifiers. The device has several advantages over conventional transistors, such as faster switching speed, lower losses, higher efficiency and higher power density. Due to its advantages, the device is increasingly being used in various applications.

The IRGS4640DTRLPBF is an excellent candidate for various applications requiring fast switching speed and low losses. It provides the user with a reliable, cost-effective and highly efficient solution for various power control applications. The device is regularly used in electric vehicles and industrial motor drives, as well as in switching cell phone RF amplifiers. With its multiple advantages and versatile applications, the IRGS4640DTRLPBF is one of the most widely used single IGBT transistors in the market today.

The specific data is subject to PDF, and the above content is for reference

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