IRGS4607DPBF

Switching Energy:	140µJ (on), 62µJ (off)
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	48ns
Test Condition:	400V, 4A, 100 Ohm, 15V
Td (on/off) @ 25°C:	27ns/120ns
Gate Charge:	9nC
Input Type:	Standard
Series:	--
Power - Max:	58W
Vce(on) (Max) @ Vge, Ic:	2.05V @ 15V, 4A
Current - Collector Pulsed (Icm):	12A
Current - Collector (Ic) (Max):	11A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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Introduction

IRGS4607DPBF is a Single IGBT (Insulated Gate Bipolar Transistor). It consists of a metal-oxide-semiconductor (MOS) field-effect transistor (FET) and a bipolar junction transistor (BJT). This device is fabricated on a silicon wafer and has various applications.

Application field

IRGS4607DPBF offers various applications. This device is widely used in applications such as power factor correction, filament power supply, switching power supply, DC/DC converters, UPS systems, electric vehicle inverters, and uninterruptible power supply. It is suitable for many applications, including low-power DC/DC converters, motor control, welding and plasma cutting applications, as well as other applications that require high-efficiency power conversion. The main features of this device are high voltage withstand capability, high speed, low gate drive power, low on-state resistance, high-speed switching, robustness, and wide operating temperature range. It is also capable of operating at high frequency and operating voltages.

Working Principle

An IGBT is a three-terminal device that combines the characteristics of a metal-oxide-semiconductor field-effect transistor (MOSFET) and an Insulated Gate Bipolar Transistor (IGBT). It is a four-layer device, made up of two p-type layers, an n-type layers, and a gate insulation layer. When a voltage is applied to the gate of an IGBT, the current channel is created between the collector and the emitter, and the device is said to be in the “on” state. The device works on the principle of three components - an N-type channel for controlling the current, a P-type body for carrying electric current and a gate insulation layer for controlling the voltage across the Gate and the Drain. As voltage is applied to the gate, the electric field is applied to the P-type body and electric current starts to flow. This electric field induces a change in the density of electrons and holes at the interface between the N-type and P-type regions. When the gate voltage is high enough, the device is in "on" state and electrons are repelled away from the interface region and holes are attracted towards it. This creates a conducting channel between the emitter and collector and the current can now flow through it. The IGBT has several advantages over a standard MOSFET, such as high current flow, lower conduction losses, and lower switching losses. It also has lower gate drive power requirement and higher switching speed.

Conclusion

In conclusion, IRGS4607DPBF is a single IGBT device with various applications. The device works on the principle of a metal-oxide-semiconductor field-effect transistor and a bipolar junction transistor. It offers various advantages such as high speed switching, low on-state resistance, high voltage withstand capability, and robustness. This device is suitable for applications that require high efficiency power conversion such as motor control and switching power supplies.

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