IRGS4615DTRRPBF Allicdata Electronics
Allicdata Part #:

IRGS4615DTRRPBF-ND

Manufacturer Part#:

IRGS4615DTRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 23A 99W D2PAK
More Detail: IGBT 600V 23A 99W Surface Mount D2PAK
DataSheet: IRGS4615DTRRPBF datasheetIRGS4615DTRRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 70µJ (on), 145µJ (off)
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 60ns
Test Condition: 400V, 8A, 47 Ohm, 15V
Td (on/off) @ 25°C: 30ns/95ns
Gate Charge: 19nC
Input Type: Standard
Series: --
Power - Max: 99W
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Current - Collector Pulsed (Icm): 24A
Current - Collector (Ic) (Max): 23A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IGBTs (Insulated Gate Bipolar Transistors) are a type of transistor used to switch electric current. They are part of the family of transistors known as "power transistors", which are specialized in being able to efficiently handle large amounts of current. In particular, the IRGS4615DTRRPBF is a type of single IGBT, ideal for use in high-power applications. In this article, we will explain the application field and working principle of the IRGS4615DTRRPBF.

Application Field

The IRGS4615DTRRPBF is designed to be used in applications where high power is required. It is capable of handling up to 1500 Volts, so it is suitable for power electronics and other industrial applications, such as welding machines and Uninterruptible Power Supplies (UPS). Additionally, it is also used in motor control applications, where it can reduce the power losses associated with inductive loads.

Working Principle

An IGBT is basically a combination of a MOSFET and a BJT, connected together in such a way as to give it the advantages of both transistors. When the gate voltage is below the threshold voltage, the MOSFET portion is on and the BJT portion is off, so current can flow between the collector and emitter. When the gate voltage is increased above the threshold voltage, the MOSFET is turned off and the BJT is turned on, and current can no longer flow between the collector and emitter.

The IRGS4615DTRRPBF is a fast switching IGBT, capable of switching at frequencies up to 25 kHz. It has a maximum collector-emitter voltage of 1500 Volts, and can handle currents up to 140 Amps. Due to its high voltage and current ratings, it is an ideal choice for high-power applications.

The IRGS4615DTRRPBF is also designed with a negative temperature coefficient, so that its VCE(on) can be adjusted over a wide range. This allows it to be used in applications where precise adjustment over temperature is needed, such as motor and transformer control. Additionally, it is also designed with a low gate drive power dissipation, making it suitable for applications where power efficiency is a must.

Conclusion

In summary, the IRGS4615DTRRPBF is a high-power IGBT designed for use in applications where high voltage and current are required. It has a high switching speed, low gate drive power dissipation, and negative temperature coefficient, making it suitable for power electronics and motor control applications. Furthermore, it is also capable of handling up to 1500 Volts and 140 Amps, making it an ideal choice for power switching and other industrial applications.

The specific data is subject to PDF, and the above content is for reference

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