IS66WVE2M16EBLL-70BLI Allicdata Electronics
Allicdata Part #:

706-1546-ND

Manufacturer Part#:

IS66WVE2M16EBLL-70BLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC PSRAM 32M PARALLEL 48TFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 32Mb (2M x 16) Paral...
DataSheet: IS66WVE2M16EBLL-70BLI datasheetIS66WVE2M16EBLL-70BLI Datasheet/PDF
Quantity: 2000
Stock 2000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 32Mb (2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)
Description

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The IS66WVE2M16EBLL-70BLI is a type of memory component. It is generally used as non-volatile memory, especially for applications that need to store and recall data even if power is removed from the system.

The IS66WVE2M16EBLL-70BLI can be used in a wide range of applications, such as digital cameras, computers, and memory cards. It is typically used as an embedded system application or as a supplemental form of permanent storage. It is also used in automated data collection systems and security cameras. The most common use for the IS66WVE2M16EBLL-70BLI is in the form of embedded flash memory.

The IS66WVE2M16EBLL-70BLI has a few key features that make it suitable for a variety of applications. First, it is designed to be very low power, so it does not consume a lot of electricity, which is ideal for battery-powered applications. In addition, the device is also very fast and can read and write data very quickly. Finally, it is very reliable and durable, making it ideal for long-term storage applications.

The IS66WVE2M16EBLL-70BLI works on the principle of delivering energy to a semiconductor film through a vapor deposition process known as wafer-level packaging. The energy is then used to charge and discharge the cells that make up the memory unit. When the power is supplied to the chip, it creates an electric field that stores a bit in each cell. When power is removed, the charge remains and the data is stored. The process is completely non-volatile, meaning that the data is still there even if the power is cut off.

To read the data from the IS66WVE2M16EBLL-70BLI, an electrical current is sent through the chip, which causes the bits within each cell to be read. Reading is a quick and efficient process, as it only takes a few milliseconds for the whole chip to be read. Writing to the chip is also very fast, as data can be written at a rate of up to 10 megabytes per second.

When using the IS66WVE2M16EBLL-70BLI for storage applications, it is important to consider the longevity of the storage. The life of the chip can be extended if it is treated with the utmost care and attention. For example, the chip should be kept clean and should not be exposed to extreme temperatures. If it will be in a static environment, it should be regularly read and written to, as this ensures the data stored on the chip remains current.

In summary, the IS66WVE2M16EBLL-70BLI is a type of non-volatile memory component and is most commonly used in a variety of embedded devices. It utilizes a vapor deposition process to store and recall data and has a very low power consumption. It is also very fast and reliable and can be used for long-term storage applications. Care must be taken with the chip in order to ensure it remains functional for long periods of time.

The specific data is subject to PDF, and the above content is for reference

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