IS66WV51216BLL-55TLI Allicdata Electronics
Allicdata Part #:

IS66WV51216BLL-55TLI-ND

Manufacturer Part#:

IS66WV51216BLL-55TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC PSRAM 8M PARALLEL 44TSOP II
More Detail: PSRAM (Pseudo SRAM) Memory IC 8Mb (512K x 16) Para...
DataSheet: IS66WV51216BLL-55TLI datasheetIS66WV51216BLL-55TLI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 8Mb (512K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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Memory: IS66WV51216BLL-55TLI Application Field and Working Principle

IS66WV51216BLL-55TLI is a type of memory widely used in computing and electronics. It can store large amounts of data and is often used in the construction of systems such as computers, digital cameras, phones, and other digital media devices. Thus, the IS66WV51216BLL-55TLI belongs to the family of memory storage devices.

Application Field

IS66WV51216BLL-55TLI memory is incredibly versatile and can be used for numerous applications in the field of computing, such as program storage, re-writable mass storage, data caching, and firmware storage. It is also used in a variety of consumer electronic devices. IS66WV51216BLL-55TLI memory is used in phones, cameras, game consoles and more. Additionally, IS66WV51216BLL-55TLI memory is often used for graphics applications, such as 3D graphics, video games and other multimedia applications.

Working Principle

IS66WV51216BLL-55TLI is a type of nonvolatile memory, which means that it retains its state even when power is lost. The IS66WV51216BLL-55TLI operates by storing data on an array of metal-oxide semiconductor random access memory (MOS RAM) cells. Each cell is holds a single bit of data, with one cell usually representing the binary value “0” and the other representing “1”. This type of memory operates on the principle of charge stored on a gate between two insulators, which will either be set to the “1” or “0” state, depending on the voltage on the gate.

IS66WV51216BLL-55TLI also has two states of operation: reading/writing and addressing. When the device is attempting to write data to the cells, it uses an address multiplexer to direct the data to the correct cells. When the device is attempting to read data, it also uses the multiplexer to direct the data to the correct reading circuit.

IS66WV51216BLL-55TLI memory provides a wide range of benefits, such as high speed operation (it can run at speeds up to 200 MBps), low power consumption, minimal latency, and error correction capabilities. This makes it an ideal choice for a variety of applications, from consumer electronics to measuring instruments and industrial automation.

In conclusion, IS66WV51216BLL-55TLI memory is a type of non-volatile memory used for a broad array of application fields. Its working principle is based on the storage and retrieval of data from MOS RAM cells using an address multiplexer. It offers numerous advantages, such as high speeds, low latency, and low power consumption, making it suitable for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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