IS66WVE2M16EBLL-55BLI Allicdata Electronics
Allicdata Part #:

IS66WVE2M16EBLL-55BLI-ND

Manufacturer Part#:

IS66WVE2M16EBLL-55BLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC PSRAM 32M PARALLEL 48TFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 32Mb (2M x 16) Paral...
DataSheet: IS66WVE2M16EBLL-55BLI datasheetIS66WVE2M16EBLL-55BLI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 32Mb (2M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)
Description

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Memory is a type of information processing systems used for recording, storing and retrieving data. The IS66WVE2M16EBLL-55BLI is a powerful memory solution that is perfect for use in a variety of industrial and commercial applications. The IS66WVE2M16EBLL-55BLI is designed to be used in high-speed memory applications and offers improved power efficiency, scalability, and sustainability.

The IS66WVE2M16EBLL-55BLI is a dual-die, 204-pin configuration memory device. This memory solution is built with a 56M x 16bits configuration. The dual-die 40nm process design allows the device to offer improved storage density and higher speed while keeping power consumption low. The IS66WVE2M16EBLL-55BLI offers faster page and transaction speeds. This device is available in two versions: a commercial version with a normal frequency range and an industrial version with a wide temperature range.

The IS66WVE2M16EBLL-55BLI is ideal for use in industrial applications that require high-speed memory and need to operate in extreme temperatures. This device is suitable for use in applications such as industrial control systems, transportation systems, real-time embedded systems, and more. The device is also suitable for a variety of commercial applications such as gaming, networking, and communications.

The IS66WVE2M16EBLL-55BLI works with the DDR3 SDRAM memory, which has superior performance and power efficiency compared to the DDR2 SDRAM memory. DDR3 SDRAM memory can operate at higher clock speeds and support higher data rates. It also has improved latency and reduced power consumption over its predecessor. The IS66WVE2M16EBLL-55BLI is designed to have a low-voltage interface, enabling it to operate at lower power consumption.

The IS66WVE2M16EBLL-55BLI has a power-saving feature that can reduce power consumption in standby mode. The device is also equipped with an integrated self-refresh feature that ensures that stored data is refreshed even when the memory is in its idle state. This helps to reduce power consumption and improves reliability.

The IS66WVE2M16EBLL-55BLI also has a thermal protection feature that helps protect the device from overheating. The device supports multiple error-correction codes that detect and correct any errors during data transmission. This helps to improve data transmission and reliability.

The IS66WVE2M16EBLL-55BLI is an ideal memory solution for a variety of industrial and commercial applications. This device offers improved power efficiency, scalability, and sustainability while supporting faster page and transaction speeds. It supports DDR3 SDRAM memory with superior performance and power efficiency. This device is designed to have a low-voltage interface to reduce power consumption and is equipped with an integrated self-refresh feature to ensure stored data is refreshed even when the memory is in its idle state. Additionally, the device is equipped with thermal protection and error-correction features for improved reliability and data transmission.

The specific data is subject to PDF, and the above content is for reference

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