IXGH12N60C Allicdata Electronics
Allicdata Part #:

IXGH12N60C-ND

Manufacturer Part#:

IXGH12N60C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 24A 100W TO247AD
More Detail: IGBT 600V 24A 100W Through Hole TO-247AD (IXGH)
DataSheet: IXGH12N60C datasheetIXGH12N60C Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 100W
Base Part Number: IXG*12N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 12A, 18 Ohm, 15V
Td (on/off) @ 25°C: 20ns/60ns
Gate Charge: 32nC
Input Type: Standard
Switching Energy: 90µJ (off)
Series: HiPerFAST™, Lightspeed™
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Current - Collector Pulsed (Icm): 48A
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs are a type of transistor commonly used in power electronics circuits. The IXGH12N60C is an insulated-gate bipolar transistor (IGBT) that is widely applied in many medium-frequency power control systems. This article will discuss the IXGH12N60C’s application field and working principle.

Application Field of IXGH12N60C

The IXGH12N60C is suitable for many medium-frequency power control applications, such as AC and DC inverters, motor control, frequency converters, and voltage converters. It is designed to operate in a wide variety of conditions and environments, ranging from low to high temperature, humidity, and pressure. Additionally, it is capable of operating with a wide range of voltages, allowing it to be used in almost any power control circuit. This makes it ideal for applications that require reliable and efficient power control.

Working Principle of IXGH12N60C

The IXGH12N60C is an IGBT that works by combining the conducting and switching capabilities of a traditional metal-oxide-semiconductor (MOS) transistor with the voltage handling of a bipolar transistor. This combination allows for faster switching and greater voltage control setpoints at a much lower power consumption. The IXGH12N60C also operates with a reverse-recovery current, which minimizes the common-mode noise as well as the EMI interference of the circuit.

The IXGH12N60C utilizes a non-punch-through (NPT) structure, which is designed to provide a lower leakage current and improved forward voltage (VF) drop. Additionally, its depletion-mode structure has an inherent body diode, giving it the functionality of an antiparallel diode to enhance the fast reverse recovery characteristics of the device. This enables the device to have superior efficiency and power density.

The IXGH12N60C also features a high junction temperature (Tj) and a soft short-circuiting capability. Its high Tj ensures that the device will not overheat and shut down during periods of heavy load, making it an ideal choice for applications related to motor control and medium-frequency power control. Its soft short-circuiting capability enables it to provide protection from any large current surge without the risk of damaging the device.

Conclusion

The IXGH12N60C is a versatile IGBT device that can be used in a variety of medium-frequency power control applications. It is designed with a NPT structure that offers lower leakage current and improved performance, as well as a depletion-mode structure that provides superior efficiency and power density. The IXGH12N60C also features a high Tj and a soft short-circuiting capability to ensure maximum protection and reliability. With its wide range of features, the IXGH12N60C makes an ideal choice for many power control applications.

The specific data is subject to PDF, and the above content is for reference

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