IXGH12N120A2D1

IXGH12N120A2D1: Application Field and Working Principle

IXGH12N120A2D1 is a type of IGBT (Insulated-Gate Bipolar Transistor) that is classified as single. IGBTs are solid state power amplifiers that are composed of three main components: a Bipolar Junction Transistor (BJT), an Insulated Gate Field Effect Transistor (IGFET) and a Diode. The special construction of the IGBT enables it to combine the advantages of the two aforementioned transistors, hence making it an efficient switching device.

Application Field

IXGH12N120A2D1 is an ideal choice for motor drive applications, such as elevators, robotics and automotive equipment. Additionally, it can be used for lighting controls, medical applications, semiconductor testing and production equipment, as well as control systems for renewable energy.

Due to its powerful and wide-range applications, IXGH12N120A2D1 has proven to be a reliable and cost-effective device. The device operates at high speeds and can deliver excellent current, power, and short-circuit capabilities. Moreover, it features low gate charge and is capable of dissipating thermal stress.

Working Principle

The IGBT are usually formed by depositing a N-channel MOSFET and a P-NP-N diode monolithically on the same chip. This form allows the power semiconductor to be operated both in bipolar mode and in MOSFET mode, results in the advantages of both types of transistors.

In a functioning IXGH12N120A2D1, the two PN-junctions of the transistors and the diode together form a three layer structure: the Gate -> Collector, Emitter -> Base and diode. During its operation the IXGH12N120A2D1 behaves differently depending on the type of current flowing through it.

When alternating current flows from the collector and into the emitter, the IGBT works as transistor and the gate allows to regulate the current. The gate controls both the voltage and the switching speed of the device. During this process, the diode is off.

When direct current flows through the emitter and into the collector, the diode becomes active, which is an advantage since the lack of an external diode eliminates the need of additional components.

Conclusion

IXGH12N120A2D1 is a type of IGBT (Insulated-Gate Bipolar Transistor), which is classified as single. It is commonly used for motor drive applications such as elevators, robotics and automotive equipment, as well as for lighting controls, medical applications, semiconductor testing, and production equipment. The IXGH12N120A2D1 also features low gate charge, power and current capabilities and is capable of dissipating thermal stress. Additionally, its structure allows it to combine the advantages of both the MOSFET and the BJT.