IXGH40N60B

Switching Energy:	2.7mJ (off)
Base Part Number:	IXG*40N60
Supplier Device Package:	TO-247AD (IXGH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 40A, 4.7 Ohm, 15V
Td (on/off) @ 25°C:	25ns/180ns
Gate Charge:	116nC
Input Type:	Standard
Series:	HiPerFAST™
Power - Max:	250W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 40A
Current - Collector Pulsed (Icm):	150A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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IXGH40N60B Application Field and Working Principle

The IXGH40N60B Insulated Gate Bipolar Transistor (IGBT) is a single device in the transistors category, which is built on Insulated Gate Bipolar Transistor (IGBT) technology. It is designed for low to medium voltage operation and is typically used in high-speed switching applications. The IXGH40N60B is particularly suitable for switching low current and low voltage loads.The IXGH40N60B has an operating voltage range of between -60 and 1200V, and a maximum operating temperature of 109 degrees Celsius. It has an on-state resistance of Negligible Voltage Drop (NVD), a minimum sourcing current of 25mA and a maximum source current of 40A. The device also has a maximum drain current of 40A and a junction-to-case thermal resistance (RθJC) of 1.2 K/W.The IXGH40N60B is typically used in applications such as power supplies, motor drives and solenoid drivers. It is also used in power management, motor control, and appliance control. In motor drives and control, the IXGH40N60B is used to drive and control the speed and torque of various types of motors including AC and DC. In power management and appliance control, the IXGH40N60B is used to efficiently regulate power usage, control and regulate the proper functioning of various types of appliances.The IXGH40N60B is composed of two main components: an N-channel MOSFET and a PNP bipolar junction transistor (BJT). The N-channel MOSFET is responsible for switching the load current from the collector to the emitter and vice versa. The PNP BJT is used to regulate the voltage supplied to the base of the N-channel MOSFET.The working principle of the IXGH40N60B is quite simple. When the gate voltage is below the threshold voltage, the N-channel MOSFET is switched off and the PNP BJT is turned on. This allows current to flow from the base of the N-channel MOSFET to the J1 collector (drain). When the gate voltage is above the threshold voltage, the N-channel MOSFET is switched on and the PNP BJT is turned off. This allows the current to flow from the base of the N-channel MOSFET to the J2 emitter (source). The IXGH40N60B is capable of fast switching and thus can be used in high-speed switching applications.In addition, the IXGH40N60B features diode protection. This diode prevents voltage from flowing through the device during positive or negative transients. This ensures that the device is protected from any potential damage, and is one of the main reasons why the IXGH40N60B is used for applications such as motor drives and solenoid drivers.Overall, the IXGH40N60B is a robust and reliable single device in the transistors category. It is designed for low to medium voltage operation and is suitable for switching low current and low voltage loads. The IXGH40N60B has an operating voltage range of between -60 and 1200V, and a maximum operating temperature of 109 degrees Celsius. Furthermore, it has an on-state resistance of Negligible Voltage Drop (NVD), a minimum sourcing current of 25mA and a maximum source current of 40A. The device also has a maximum drain current of 40A and a junction-to-case thermal resistance (RθJC) of 1.2 K/W. It is typically used in applications such as power supplies, motor drives and solenoid drivers, and features diode protection for reliable operation and performance.

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