IXGH12N120A3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXGH12N120A3 belongs to Infineon\'s OptiMOS Power-MOSFET family and is designed for industrial applications. It features a low on-state resistance, excellent gate-charge-extraction performance, dv/dt capability, as well as low package inductance for superior reliability. Widely used for motor drives, solar, welding, DC/DC converter, automotive electronics, UPS, compresseor applications and telecom power supplies.

The IXGH12N120A3 is a type of single IGBT and is a three-terminal semiconductor device possessing a high input impedance, low on-state voltage drop, fast switching speed and dv/dt immunity. It is essentially composed of two power transistors connected as a super-lattice, emitter-collector region of the one transistor providing the rate of change of magnitude of collector current, and the emitter-collector region of the other transistor providing the magnitude of collector current.

Basically this single IGBT works as a fast switching electronic device based on the principles of control principle of the PNPN device. It is controlled by the application of a control signal to its gate terminal; when the control signal is on, the IGBT is turned on and conducts current from the collector to the emitter. Then, since the base region of the IGBT is also conducting, it has a low voltage drop between the collector and emitter.

Furthermore, switching from the on-state to the off-state and vice versa occurs in a very short time. As a result, this IGBT has high switching frequency and fast recovery times, allowing for efficient power management. Additionally, its tightly matched input impedance at the gate helps to minimize power losses.

Similar to other Infineon OptiMOS Single IGBTs, the IXGH12N120A3 has many advantages compared to conventional power MOSFETs. It provides a lower on-state resistance, excellent switching frequency performance, dv/dt immunity, as well as a very good thermal stability. Furthermore, it has a relatively lower input gate charge, thus requiring less energy to gate control. Additionally, the IXGH12N120A3 has a low gate driving power consumption, which helps to improve the overall efficiency of the system.

The IXGH12N120A3 also has built-in flicker protection, preventing any current surges that may cause flicker in the system. Additionally, its temperature flexibility feature helps to avoid thermal runaway when the temperature is too high. This helps to improve the system reliability, especially in high-power applications.

In conclusion, Infineon\'s IXGH12N120A3 single IGBT is a perfect choice for industrial applications. It provides a low on-state voltage drop and excellent switching performance. Additionally, its built-in protection features and temperature flexibility help to improve the system reliability. For those reasons, it is a great choice for motor drives, automotive electronics, welding, DC/DC converter, solar, UPS, compressor and telecom power supplies.

The specific data is subject to PDF, and the above content is for reference