IXGH28N60B

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IXGH28N60B Application Field and Working Principle

Introduction
The IXGH28N60B is a 1500V Integrated Gate Commutated Thyristor (IGCT) that belongs to the IGBT family. The IGBT family consists of two types of transistors, insulated gate bipolar transistors (IGBTs) and insulated gate field-effect transistors (MOSFETs), that are used in different applications due to the different switching characteristic of each type. The IXGH28N60B is a MOSFET device that can be used in certain applications that require high switching speed and low dissipation.

Application Field
The IXGH28N60B is well-suited for applications that require high power efficiency and reliability. It is also used in applications where low speed switching is required, such as in motor control, it can easily reach a switching voltage of up to 1200V.

The IXGH28N60B can also be used in solid-state drive and motor control applications since it has a good temperature resistance and high current density. This device can also be used in DC/DC converters, solar inverters and electric vehicle battery management systems.

In addition, since this device is insensitive to noise and has fast switching capabilities, it is also suitable for applications where a reliable device is needed but only limited switching conditions are available.

Working Principle
The IXGH28N60B utilizes an insulated-gate field-effect transistor (MOSFET) to switch electric current through an inlet pin to the drain pin and the gate pin. The MOSFET’s gate is coupled to the gate pin, and controls the amount of current flowing from the drain pin. The IXGH28N60B is designed such that when the gate voltage is high, the MOSFET is turned on, allowing current to flow from the drain pin. When the gate voltage is low, the MOSFET turns off and the drain pin is blocked off. This is the basic principle of operation used by all IGBT devices.

The IXGH28N60B has a typical gate drive capability of 10V, which allows it to switch current of up to 1500V. It also has an excellent on-state resistance of 0.45 mOhm, which greatly improves the power efficiency of the device. Because of this, the device can easily switch up to 150A of current with minimal dissipation.

The IXGH28N60B is also protected by a reverse blocking diode in order to protect it from high voltage spikes. Moreover, the device can operate with a maximum junction temperature of +175C, which allows it to withstand harsh operating conditions.

Conclusion
The IXGH28N60B is a MOSFET device which is suitable for a variety of applications that require high power efficiency and reliability. The device’s excellent switching characteristics allow it to easily reach voltages of up to 1500V and is protected from high voltage spikes with a reverse blocking diode. In addition, it can operate with a maximum junction temperature of +175C, making it an excellent choice for applications where a reliable device is needed but limited switching conditions are available.

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