IXGH48N60B3C1 Allicdata Electronics

IXGH48N60B3C1 Discrete Semiconductor Products

Allicdata Part #:

IXGH48N60B3C1-ND

Manufacturer Part#:

IXGH48N60B3C1

Price: $ 17.78
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 300W TO247
More Detail: IGBT PT 600V 75A 300W Through Hole TO-247AD (IXGH)
DataSheet: IXGH48N60B3C1 datasheetIXGH48N60B3C1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 16.15970
Stock 1000Can Ship Immediately
$ 17.78
Specifications
Power - Max: 300W
Base Part Number: IXG*48N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C: 22ns/130ns
Gate Charge: 115nC
Input Type: Standard
Switching Energy: 450µJ (on), 660µJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Current - Collector Pulsed (Icm): 280A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGH48N60B3C1 is a part of the IXGH series of Insulated Gate Bipolar Transistors, also known as an IGBT. Specifically, this model belongs to the single type IGBTs. This transistor is a very powerful device, offering industrial levels of performance at a relatively low cost. It has a wide range of applications and is suitable for use in a variety of different commercial and residential applications.

An IGBT is a type of transistor that is widely used in voltage-controlled switches and power amplifiers. Traditional transistors are made up of two PN junctions, with one side being the collector and the other being the emitter. The IGBT uses two NPN and two PNP junctions in order to achieve a higher level of efficiency and power. This allows the IGBT to be used in applications which require higher levels of voltage and power than traditional transistors.

The IXGH48N60B3C1 is specifically designed to be used in power electronic applications. It is made up of a silicon substrate with a bonded gate oxide layer and a N-type epitaxial layer. The device has a wide range of features, including high-voltage, fast turn off, and a low on-state resistance. The wide range of features allows the device to be used in a wide range of applications including motor controls, power supplies, and energy conversion systems.

The working principle of the IXGH48N60B3C1 is relatively simple and relies on the behavior of electric charges. When the device is turned on, the NPN and PNP junctions allow electric charges to pass through the device. The electric charges then induce an electric current which can be used to turn on an electronic device or operate a motor, depending on the application. The device is turned off by reducing the voltage across the device, which causes the electric charges to dissipate.

The IXGH48N60B3C1 is a powerful and versatile device that can be used in a variety of applications. It is most commonly used in motor controls, power supplies, and energy conversion systems. However, it is also suitable for use in other applications, including AC-DC and DC-AC conversion, soft starters, and UPS systems. The device has a wide range of features, including a high-voltage capability, fast turn off, and a low on-state resistance. This makes it a popular choice for both commercial and residential applications.

The specific data is subject to PDF, and the above content is for reference

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