Switching Energy:	1.3mJ (off)
Base Part Number:	IXG*30N60
Supplier Device Package:	TO-247AD (IXGH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 30A, 4.7 Ohm, 15V
Td (on/off) @ 25°C:	25ns/130ns
Gate Charge:	125nC
Input Type:	Standard
Series:	HiPerFAST™
Power - Max:	200W
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 30A
Current - Collector Pulsed (Icm):	120A
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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IXGH30N60B Application Field and Working Principle

Introduction

The IXGH30N60B (IXGH30N60) is a 600V/30A IGBT from IXYS Corporation. It is an insulated-gate bipolar transistor (IGBT) based on IXYS MOSFET technology. Due to its high speed switching characteristics, the IXGH30N60B is suitable for applications such as power converters, motor drives, and power factor correction. It is commonly used in industrial and consumer applications.

Features

The IXGH30N60B is an IGBT with several features that make it well-suited for certain applications. These features include high current handling capability, high switching frequency, and low power consumption. The IXGH30N60B also has high blocking voltage, meaning it can withstand higher voltages than other IGBTs. In addition, it has low on-state resistance, providing low power dissipation and longer system operation time.

Applications

The IXGH30N60B is suitable for many applications due to its high current handling capability and switching frequency. These applications include DC/AC power conversion, motor control, magnetic amplifiers, snubber circuits, and power switching circuits. It is ideal for driving single phase and three phase motors, as well as variable frequency drives. Additionally, it can be used in solar inverters and DC/DC/AC UPS systems.

Working Principle

The IXGH30N60B IGBT works on the principle of a voltage-controlled switch. When an input voltage is applied to the gate of the IGBT, a channel forms between the source and drain electrodes. This channel is used to conduct current from the source to the drain. When the input voltage is removed, the channel is turned off and the current stops flowing. This allows for very fast switching of currents between the source and drain. The size and number of available channels determine the switching performance of the IGBT.

Conclusion

The IXGH30N60B IGBT is a high-performance insulated gate bipolar transistor suitable for driving single and three-phase motors, as well as power conversion and motor control applications. Its features, such as its high current handling capability, high switching frequency, and low power consumption, make it a good choice for these applications. Furthermore, its working principle of voltage-controlled switching allows for fast, efficient current switching between the source and the drain.

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