IXGH40N60C2 Allicdata Electronics
Allicdata Part #:

IXGH40N60C2-ND

Manufacturer Part#:

IXGH40N60C2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 300W TO247AD
More Detail: IGBT PT 600V 75A 300W Through Hole TO-247AD (IXGH)
DataSheet: IXGH40N60C2 datasheetIXGH40N60C2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 300W
Base Part Number: IXG*40N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 30A, 3 Ohm, 15V
Td (on/off) @ 25°C: 18ns/90ns
Gate Charge: 95nC
Input Type: Standard
Switching Energy: 200µJ (off)
Series: HiPerFAST™
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGH40N60C2 is an N-Channel IGBT ("Insulated Gate Bipolar Transistor") from the latest generation of IGBTs. This important part of semiconductor circuit technology allows for relatively high power gain, low power losses, low voltage losses and very low gate noise. It is part of the Single IGBT Transistor family, a category of devices specifically designed to handle powerful high-frequency signals and provide reliable high-power performance.

The single IGBT transistor works within the range of 400V to 600V. It comprises of an N-channel MOSFET and a PNP bipolar transistor situated in series. The two transistors are connected in antiparallel to each other, which allows the transistor to turn "On" and "Off" with a high level of efficiency. When the MOSFET is "On", the PNP bipolar transistor is "Off" and vice versa. This structure is called a "MOSFET-PNP junction" and is responsible for the majority of the IGBT\'s characteristics allowing for the exceptional performance gains.

The IXGH40N60C2 IGBT draws from this design principle to offer an impressive power rating of 600V/40A max. It also has a maximum switching time of 65ns, meaning it can be quickly turned on, then off to handle multiple signal transfers. Moreover, it also has a low gate-charge (Qg) of 287nC, lower parasitic body diode surge voltage and a short tail current, making it ideal for high-frequency applications such as motor drives.

The IXGH40N60C2 is also highly efficient, delivering up to 97% efficiency when the switching frequency is between the range of 3kHz to 20kHz. This becomes a huge advantage in applications where fast switching and low power losses are crucial. It can also produce very low EMI emissions, making it perfect for applications where EMI is a factor which needs to be taken into account.

Due to its features, this device is suitable for use in a number of applications. It is typically found in motor control systems, robotics, medical equipment, electric vehicle control and renewable energy systems. It is also used in lighting systems and in the power supply of industrial tooling, automotive and aerospace products. This versatility makes it useful in any number of applications across multiple industries.

In conclusion, the IXGH40N60C2 IGBT is an extremely reliable IGBT transistor. Thanks to its impressive power rating, low switching times, low gate-charge and high efficiency, it is ideal for a variety of applications. This makes it a great choice for those looking to increase performance, lower power losses and improve EMI performance in their transistor-based systems.

The specific data is subject to PDF, and the above content is for reference

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