IXGH32N170A

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The IXGH32N170A is a 1700V, 3300A, TO247-4 insulated gate bipolar transistor (IGBT) module, designed for use in the inverter field and motor control field. It is designed for applications requiring high speed and high output current, and is suitable for high current, high speed switching. This device offers a soft conducting characteristic with low loss, making it ideal for a variety of medium and large power applications.

The IXGH32N170A features a single junction IGBT as its main component, which is a two terminal device consisting of a P-type emitter and N-type collector region with a transparent or “floating” gate. The gate is formed by applying a voltage between the emitter and the collector, similar to the way a transistor works. When the gate voltage is applied, it creates an inversion layer at the interface between the emitter and the collector, allowing current to flow between them. This produces a low voltage drop and high switching speeds compared to a regular bipolar junction transistor.

The IXGH32N170A has a power dissipation capability of up to an impressive 3300A and a breakdown voltage rating of 1700V. It has an Optimized Diode Recovery Time (DRT) which is designed to reduce switching losses and improve system efficiency. The IGBT module has a high frequency write and forward current rate, allowing it to operate at frequencies up to 40 kHz, making it ideal for motor control applications requiring high speed. The module also features a Temperature Dependent IC Curve which allows it to impedance match with the application to further improve efficiency.

The IXGH32N170A has a patented anti-parallel diode which is integrated into the module and provides a wide forward voltage window which improves reliability and reduces power losses. The device is rated for an ambient temperature range of -40 to +125 °C and has an enhanced robustness and thermal stability due to its unique design. The IGBT module also features an integrated super-junction structure, which increases the electrical field across the emitter and collector regions, allowing for a higher amount of reverse current.

In summary, the IXGH32N170A is a high-performance IGBT module designed for use in the inverter field, motor control field and other demanding medium and large power applications. It offers excellent switching speeds, low voltage drop and high power dissipation capability making it ideal for applications requiring high speed and current. It also features an integrated anti-parallel diode, enhanced robustness and thermal stability, and an Optimized Diode Recovery Time for improved system efficiency.

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