IXGH16N60B2D1 Allicdata Electronics
Allicdata Part #:

IXGH16N60B2D1-ND

Manufacturer Part#:

IXGH16N60B2D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 40A 150W TO247
More Detail: IGBT PT 600V 40A 150W Through Hole TO-247AD (IXGH)
DataSheet: IXGH16N60B2D1 datasheetIXGH16N60B2D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 160µJ (on), 120µJ (off)
Base Part Number: IXG*16N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 30ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Td (on/off) @ 25°C: 18ns/73ns
Gate Charge: 24nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Current - Collector Pulsed (Icm): 100A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGH16N60B2D1 is a high performance Insulated Gate Bipolar Transistor (IGBT) that is designed for high speed, high power industrial applications. This transistor is single in its configuration, meaning it only requires one voltage input and can switch high power loads in a very efficient and reliable manner.

The IXGH16N60B2D1 is designed with a wide range of features that make it suited for a variety of power switching applications. It is capable of high speed switching, has excellent thermal and electrical characteristics, is resistant to electromagnetic interference, and is rated with a low voltage drop when switching high current loads. Additionally, the IXGH16N60B2D1 package is mounted with efficient heat sinks, ensuring reliable operation at higher than normal power levels.

The IXGH16N60B2D1\'s primary application field is the commutation of high speed power requirements with energies up to 825 kW. This place the IXGH16N60B2D1 in the category of bridge rectifiers, frequency inverters, harmonic filters, and medium to high voltage switched mode power supplies. Where other high power transistors require complex gate drivers, the IXGH16N60B2D1 offers a simple gate driver structure for easy implementation and reliable operation.

In operation, the IXGH16N60B2D1 works using the principles of insulated gate bipolar transistor switching. This type of switching uses a combination of p-channel and n-channel MOSFETs to allow for higher power switching frequencies, improved efficiency, and lower voltage drops. When a voltage is applied to the gate of the IXGH16N60B2D1, charge carriers are allowed to flow through the transistor structure. This causes the current to increase, and the voltage to decrease, resulting in power being delivered to the load.

The IXGH16N60B2D1 is a cost-effective solution for power switching applications requiring rapid switching speeds, low losses, and high current capabilities. Its design provides excellent characteristics and reliability, further adding to its value in industrial applications. With its efficient thermal design and simple gate driver structure, the IXGH16N60B2D1 is an ideal choice for switching applications requiring high power and high speed.

The specific data is subject to PDF, and the above content is for reference

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