IXGH20N120A3 Allicdata Electronics
Allicdata Part #:

IXGH20N120A3-ND

Manufacturer Part#:

IXGH20N120A3

Price: $ 4.55
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 40A 180W TO247
More Detail: IGBT PT 1200V 40A 180W Through Hole TO-247AD (IXGH...
DataSheet: IXGH20N120A3 datasheetIXGH20N120A3 Datasheet/PDF
Quantity: 35
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.13280
10 +: $ 3.68802
25 +: $ 3.31909
100 +: $ 3.02406
250 +: $ 2.72901
500 +: $ 2.44875
1000 +: $ 2.06520
Stock 35Can Ship Immediately
$ 4.55
Specifications
Power - Max: 180W
Base Part Number: IXG*20N120
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C: 16ns/290ns
Gate Charge: 50nC
Input Type: Standard
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGH20N120A3 is a type of Insulated Gate Bipolar Transistor (IGBT). IGBTs are a type of transistor that combines the properties of both a Metallic Oxide Field-effect Transistor (MOSFET) and a bipolar junction transistor (BJT), using a buffer layer of insulation to separate the solid gate from the conduction path. The IXGH20N120A3 is a single IGBT device that supports up to 1200 VDC with a high 10 kV DC isolation rating and a typical on-state resistance of 1.1 mΩ. It is also capable of providing up to 2.0 A of peak current and 2.6 A of maximum continuous current.

As with all IGBTs, the IXGH20N120A3 is designed to handle both high-current and fast switching applications. It is often used in motor control and power supply applications as well as motor drivers, solar inverters, welding, induction cooling, uninterruptible power supplies, small power factor correction modules, and other high power switching applications.

The IXGH20N120A3 works in three stages: turn-on, conduction, and turn-off. During the turn-on stage, a voltage is applied to the gate of the IGBT, which increases the channel potential to trigger the device. This, in turn, allows current to flow from the emitter to the collector. During the conduction stage, the device is fully on, allowing for current to flow freely. During the turn-off stag, the gate voltage is decreased, which reduces the potential of the channel, thus reducing the current flow from the emitter to the collector.

In addition to its high power and fast switching capability, IXGH20N120A3 is designed with an integrated NTC thermistor that provides temperature compensation and protection against over-temperature or short-circuit conditions. It also has an integrated short-circuit protection (SCP) function, which senses an over-voltage and deactivates the IGBT if its current exceeds the programmed safe limit.

Overall, the IXGH20N120A3 is an excellent choice for a wide range of high power and fast switching applications. Its high current and fast switching capability, along with its integrated NTC thermistor and short-circuit protection make it a valuable device in a variety of applications. As such, it can be used in motor control, power supply, motor driver, solar inverter, welding, induction cooling, and uninterruptible power supply applications, among others.

The specific data is subject to PDF, and the above content is for reference

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