IXGH24N120C3H1

Switching Energy:	1.16mJ (on), 470µJ (off)
Base Part Number:	IXG*24N120
Supplier Device Package:	TO-247AD (IXGH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	70ns
Test Condition:	600V, 20A, 5 Ohm, 15V
Td (on/off) @ 25°C:	16ns/93ns
Gate Charge:	79nC
Input Type:	Standard
Series:	GenX3™
Power - Max:	250W
Vce(on) (Max) @ Vge, Ic:	4.2V @ 15V, 20A
Current - Collector Pulsed (Icm):	96A
Current - Collector (Ic) (Max):	48A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IXGH24N120C3H1 Application Field and Working Principle

Overview

IXGH24N120C3H1 is one of the IGBT (Insulated Gate Bipolar Transistor) single transistor products of IXYS. This transistor is a three-terminal device that integrates the characteristics of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and bipolar junction transistors (BJTs) into one structure. The IXGH24N120C3H1 features a low on-state voltage loss and high switching speed, making it ideal for applications in power electronics. It also features a low on-state resistance for improved energy efficiency.

Applications

Due to its small size and large current carrying capacity, IXGH24N120C3H1 is suitable for applications in a number of power electronic systems, ranging from renewable energy and switching power supplies to automotive and industrial applications. This device is suitable for use in demanding applications such as motor drives, AC/DC power supplies and appliance motors. Its high power density and low switching losses make it an ideal choice for applications that require high efficiency, high power density, or a wide operating temperature range.

Construction and Working Principle

The IXGH24N120C3H1 consists of two main parts: a control electrode, or gate, and two emitter electrodes. The gate is the main control element of the device, and the two emitter electrodes are connected to the collector. When voltage is applied to the gate, it controls the current flow through the device by altering the concentration of electrons and electron holes in the N-type and P-type silicon regions. This results in a shift in the voltage distribution across the device and a change in the resistance between the collector and emitter.When Vce is applied, the gate electrode controls the magnitude of current flow through the device by concentrating electrons at the semiconductor junction, resulting in a shift of voltage distribution across the device, and a variation in current flow. The IXGH24N120C3H1 reaches its highest conductivity when the gate-to-emitter voltage reaches its peak. This indicates that the IXGH24N120C3H1 is a voltage-controlled device.

Advantages

The IXGH24N120C3H1 offers several advantages over conventional BJTs, including lower on-state voltage losses and higher switching speeds. Additionally, the IXGH24N120C3H1 features low turn-on and turn-off times, making it an ideal choice for applications that require fast switching between high current and low current states. This transistor also offers improved thermal stability and dynamic performance when compared to BJTs.Another advantage of the IXGH24N120C3H1 is its ability to provide higher current output, allowing it to achieve higher power densities and better energy efficiency. Finally, it is also capable of withstanding high voltages and operating at higher temperatures, while still providing consistent performance.

Conclusion

The IXGH24N120C3H1 IGBT transistor is a highly efficient and effective device, offering a range of advantages over conventional BJTs. Its ability to dissipate high power levels and handle high-current scenarios makes it suitable for power electronic systems. Additionally, the IXGH24N120C3H1 features low on-state voltage losses, high switching speeds, and improved dynamic performance, making it an ideal choice for applications that require fast switching.

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