IXGH25N160

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The IXGH25N160 transistor is a single IGBT designed for high-performance applications. With its low on-state resistance, fast switching times, and high efficiency, the IXGH25N160 is an ideal choice for applications that require high circuit performance and reliability.

Applications

The IXGH25N160 is suitable for many applications such as: DC/AC conversion, adjustable speed drives, power supplies and servos, machine tools and other applications that require high switching speeds. Additionally, it can be used in high-efficiency motor drives and UPS systems and many other applications where high levels of power and speed is required.

Working Principle

The IXGH25N160 is a 660V, 25A N-channel IGBT (Insulated Gate Bipolar Transistor). The device features a high-efficiency, low-on-state resistance, and fast switching capabilities, making it an ideal high-performing option. It has low turn-off losses, fast turn-on and excellent thermal properties, thanks to its high insulation voltage and low gate charge.

The IXGH25N160 is designed to be operated using a low gate voltage, and provides low-noise switching and high efficiency with minimal external components. It also has a higher breakdown voltage and a lower parasitic capacitance than other devices, making it a more reliable solution. The device comes in a TO-220 package with a built-in diode, making it easier to connect with other external components.

The IXGH25N160 works by turning the power on and off within the transistor, while simultaneously regulating the current flowing through it. Once the electrical current reaches the gate of the transistor, the insulated gate allows the current to flow across the device, turning it on and allowing power to flow through it. Once the current is no longer present, the gate of the transistor will close, turning it off and preventing power from flowing through.

The IXGH25N160 is a great choice for many applications, as it features an efficient operation, fast switching times, and high reliability. The device has a low on-state resistance, making it energy-efficient and helping to reduce power loss in high-power applications. Additionally, its low loss characteristics help to improve overall circuit efficiency, ensuring the highest levels of performance.

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