IXGH32N60C Allicdata Electronics
Allicdata Part #:

IXGH32N60C-ND

Manufacturer Part#:

IXGH32N60C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 60A 200W TO247AD
More Detail: IGBT 600V 60A 200W Through Hole TO-247AD (IXGH)
DataSheet: IXGH32N60C datasheetIXGH32N60C Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 320µJ (off)
Base Part Number: IXG*32N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 32A, 4.7 Ohm, 15V
Td (on/off) @ 25°C: 25ns/85ns
Gate Charge: 110nC
Input Type: Standard
Series: HiPerFAST™, Lightspeed™
Power - Max: 200W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IXGH32N60C is a high voltage, 3-phase insulated gate bipolar transistor (IGBT). It is the successor to the well-known IGBT series and is widely used in many power electronics applications. The device consists of a transistor, an electrical insulating element, and an electrical gate. The significant features of the IXGH32N60C include a high switching frequency, low on-state losses and low gate drive voltage, making it a high-performance IGBT.

The IXGH32N60C is widely used for online inverters, motor drives, IGBT-based inverter circuits, battery-powered inverters, solar power inverters, and other converters. It is also used in medical equipment, welding machines, Uninterrupted Power Supply and other electrical equipment.

The IXGH32N60C is a high-performance IGBT, making it the most suitable for applications dealing with high voltages and currents. It typically operates with a maximum voltage of 600 volts and a maximum current of 32 amps. It is constructed using a trench gate with a chip size of 8 mm× 8 mm. It is typically used in applications such as motor drives, battery applications, and solar inverters. The IXGH32N60C offers a wide operating temperature range of -40ºC to 125ºC.

The operating principle of the IXGH32N60C is similar to that of a standard IGBT. It can be used to switch both AC and DC. When the gate is induced with a voltage, an electric field is created which attracts the carriers to the opposite plate. This makes the transistor conduct, allowing current to flow. The gate voltage also determines the magnitude of the current flowing through the device.

The IXGH32N60C offers several advantages such as fast switching, high switching speed and low on-state losses. Its low-inductance design allows for higher frequency operations and improved performance in heavy inductive loads. Its isothermal construction allows for low-voltage driving and increased reliability. Its power capability allows it to be used in applications handling high current and voltage.

The IXGH32N60C is one of the most popular IGBTs in the market and is widely used in various applications. Due to its high current and voltage capabilities, it is suitable for a variety of power electronics applications. Its low-inductance design and low-voltage driving capabilities make it the ideal choice for heavy inductive loads and high power applications. The IXGH32N60C is an excellent choice for customers looking for a reliable, high performance IGBT.

The specific data is subject to PDF, and the above content is for reference

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