IXGH35N120C

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IXGH35N120C is a type of Insulated Gate Bipolar Transistor (IGBT), specifically a single IGBT module. This type of transistors can handle much greater currents than normal junction field effect transistors, reaching up to 35A of continuous current and up to 120A of peak current. This type of transistors have several applications, thanks to their power handling abilities and power switch characteristics.

The first application for IXGH35N120C transistors is power switches. They can be used to control the current flow between two different voltage levels, and can be used in applications where high currents and low power losses are desired. Many motor control applications, such as power steering or braking systems, use these transistors for their power switching abilities.

Another application for IXGH35N120C transistors is AC to DC converters. This type of transistors allow for high efficiency conversion of AC power to DC, while also offering protection and low loss switching capabilities. This makes them ideal for applications such as electronic ballast, solar and wind power inverters, and even uninterruptible power supplies.

IXGH35N120C transistors are also used in high frequency applications. They can handle high frequencies of up to 1.5MHz, which makes them suitable for applications such as high frequency switching power supplies, switching dc-dc converters, and ac-dc converters.

Finally, IXGH35N120C transistors can be used in motor control and power control applications, thanks to their excellent power handling abilities and their low loss switching characteristics. They are commonly used in motor controllers and power controllers, providing up to 35A of continuous current, and up to 120A of peak current.

The working principle of IXGH35N120C transistors is based on the principle of an insulated gate bipolar transistor. This type of transistor consists of an n-type semiconductor layer, a p-type semiconductor layer, and an insulation layer. When a voltage is applied to the gate terminal, it causes an electric field to be created between the n-type semiconductor layer and the insulation layer. This electric field attracts free electrons from the n-type layer, and causes them to flow into the p-type layer, thus creating a conductive path between the two layers.

The IXGH35N120C transistor is ideal for applications where high currents and low power losses are desired, such as motor control and power control applications. Thanks to its low losses and power handling capabilities, it can be used in a wide range of applications, including power switches, AC to DC converters, high frequency applications, and motor controllers.

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