IXGH40N120B2D1 Allicdata Electronics
Allicdata Part #:

IXGH40N120B2D1-ND

Manufacturer Part#:

IXGH40N120B2D1

Price: $ 8.74
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 75A 380W TO247
More Detail: IGBT PT 1200V 75A 380W Through Hole TO-247AD (IXGH...
DataSheet: IXGH40N120B2D1 datasheetIXGH40N120B2D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 7.94220
Stock 1000Can Ship Immediately
$ 8.74
Specifications
Switching Energy: 4.5mJ (on), 3mJ (off)
Base Part Number: IXG*40N120
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 100ns
Test Condition: 960V, 40A, 2 Ohm, 15V
Td (on/off) @ 25°C: 21ns/290ns
Gate Charge: 138nC
Input Type: Standard
Series: --
Power - Max: 380W
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGH40N120B2D1 is a single IGBT module, it consists of a fast-recovery free-wheeling diode and an insulated gate bipolar transistor. Compared to other Insulated Gate Bipolar Transistors (IGBTs), this particular IGBT module has improved switching performance, reduced electromagnetic emissions and greater cell count. This is essential given the environment in which IGBTs are generally used.

Application Field

IXGH40N120B2D1 is designed for applications such as motor control, frequency converters, UPS, PFC, and SMPS. The module is commonly used in industrial equipment and commercial appliances.

IGBTs can be used in all types of electric power systems, from residential, industrial, and commercial to power transmission. The IXGH40N120B2D1 module is particularly useful when there is a need for a high current load with a broad switching range and a lower power supply cost. Some examples of where it can be used are: solar panels, lifts, escalators, electrical vehicles and induction heating.

Working Principle

An IGBT works using a three layer structure – an n-type semiconductor sandwiched between two p-type semiconductors. An electric charge is applied to the gate of the IGBT, creating a layer of immediate conductivity between the n-type and p-type semiconductors. This makes it possible for current to flow between the two. The gate voltage also controls the electric current, making it easy to adjust the flow by changing the voltage.

The IXGH40N120B2D1 module can control high currents with a low gate voltage. This is achieved through the use of a fast recovery free-wheeling diode integrated with the IGBT transistor. This arrangement effectively reduces the electrical noise generated when high currents are switched on and off.

The IXGH40N120B2D1 also has a large number of cells, which helps reduce power consumption. This is because each cell can carry lower current than is possible when there is less cells in the module. The increased cell count also increases the reliability of the module, since it increases the likelihood of redundancy.

Conclusion

The IXGH40N120B2D1 is a single IGBT module with improved switching performance, reduced electromagnetic emissions and greater cell count. It is designed for applications such as motor control, frequency converters, UPS, PFC, and SMPS. It can be used in all types of electric power systems. The IGBT module works using a three layer structure, and the integrated fast-recovery free-wheeling diode helps reduce electrical noise and power consumption.

The specific data is subject to PDF, and the above content is for reference

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