IXGH40N60B2D1 Allicdata Electronics
Allicdata Part #:

IXGH40N60B2D1-ND

Manufacturer Part#:

IXGH40N60B2D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 300W TO247
More Detail: IGBT PT 600V 75A 300W Through Hole TO-247AD (IXGH)
DataSheet: IXGH40N60B2D1 datasheetIXGH40N60B2D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 400µJ (off)
Base Part Number: IXG*40N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 400V, 30A, 3.3 Ohm, 15V
Td (on/off) @ 25°C: 18ns/130ns
Gate Charge: 100nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 300W
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGH40N60B2D1 is a single insulated-gate bipolar transistors (IGBTs) used in various applications. IGBTs can deliver higher power ratings and stronger switching capabilities than conventional bipolar junction transistors (BJT) while consuming less power than a MOSFET. The IXGH40N60B2D1 is a 600 V N-channel device, with a current of 40 A and a power rating of 120 kW.The IXGH40N60B2D1 has a variety of uses in the field of power electronics. It can be used to switch and control the power supply for a variety of loads, such as motors, lamps, and emitters. In radios and televisions, the IXGH40N60B2D1 is often used as the power amplifier for modulating the frequency. In medical imaging, it is used as the power supply for x-ray tubes. The IXGH40N60B2D1 can also be used in telecom equipment, UPSs, welding machines, and power tools.The IXGH40N60B2D1\'s working principle is based on the field-effect transistor (FET) principle. In this principle, a semiconductor control terminal (known as the gate) controls the flow of electric current between the source and the drain, allowing for precision and efficient control of the electric current. This device provides very high switching pressures and features a low on-state resistance, which means it is capable of switching high amounts of power with minimal losses. The drain-source voltage is limited to 60 V, which helps to reduce losses and noise in the circuit.The IXGH40N60B2D1 can be combined with other components, such as resistors, capacitors, or diodes, to form complete power systems. This is especially useful in applications where the total power output needs to be tailored to the needs of the system. Furthermore, the IXGH40N60B2D1 can be used in various other circuits, such as analog circuits or switching power supplies.The IXGH40N60B2D1 is a reliable and versatile device. Its low on-state resistance and high switching pressures make it suitable for a variety of applications. Its working principle is based on FET principles, making it ideal for a wide range of switching and control applications. The IXGH40N60B2D1 is a popular choice for designers looking for a single IGBT to meet their power supply and switching needs.

The specific data is subject to PDF, and the above content is for reference

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