IXGH50N60A Allicdata Electronics
Allicdata Part #:

IXGH50N60A-ND

Manufacturer Part#:

IXGH50N60A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 250W TO247AD
More Detail: IGBT 600V 75A 250W Through Hole TO-247AD (IXGH)
DataSheet: IXGH50N60A datasheetIXGH50N60A Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 4.8mJ (off)
Base Part Number: IXG*50N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 50A, 2.7 Ohm, 15V
Td (on/off) @ 25°C: 50ns/200ns
Gate Charge: 200nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IXGH50N60A is an innovative transistor designed to offer impressive performance and flexibility. This single IGBT, part of IXYS\'s high current rated IGBTs family, is designed to be used in power electronics applications.

The IXGH50N60A IGBT is an advanced technology which offers excellent performance and flexibility in power applications. This single IGBT has a wide range of uses, including rectifiers, converters, solar systems, wind turbines, and many more.The IXGH50N60A offers a voltage rating of 600V, current rating of 50A, and a maximum power dissipation of 115W. It is a three-phase device, with each terminal suitable for use in high-current applications. The IGBT\'s die construction consists of N-type silicon encapsulated by an inert gas. Its ultra fast switching times allow for greater power efficiency and increased operational speed.

The IXGH50N60A has a unique working principle that combines the high-power capabilities of a bipolar transistors with the efficiency and control of a MOSFET. The IGBT is able to maintain a high-voltage signal despite momentary current spikes. This helps to maintain controlled operation in the presence of sudden voltage spikes. The IGBT also provides superior power-handling capabilities in the presence of high-frequency signals. The IGBT\'s sophisticated gate control also allows greater flexibility when switching between two different power states.

The IXGH50N60A has a wide range of applications in power electronics. It is suitable for use in small-scale power systems, such as UPSes, inverters, and drives. It can also be used for rectification, power conversion, and frequency conversion. The IXGH50N60A\'s large current rating makes it suitable for most energy-intensive applications such as solar systems, wind turbines, and motor control.

The IXGH50N60A IGBT is a powerful and reliable device for power electronic applications. Its unique design combines the advantages of both bipolar and MOSFET technologies to provide superior performance. The IXGH50N60A can handle high-current applications, as well as sudden voltage spikes. Its wide range of uses makes it a versatile and reliable solution for a variety of power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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