IXGH72N60C3

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Transistors - IGBTs - Single: IXGH72N60C3 application field and working principle

IXGH72N60C3 is a type of insulated gate bipolar transistor (IGBT) designed for advanced power management by providing high levels of efficiency and performance. It combines the fast switching, low ON-resistance, and low ON- and gate charge properties of MOSFET switches with the low gate-voltage drive of bipolar transistors. Compared to earlier generations of power MOSFET and bipolar junction transistors (BJTs), this high-performance device has improved cooler-run and short circuit withstand capabilities to deliver exceptional power operation.

In practical applications, IXGH72N60C3 can be used in a variety of locations, including motor control, UPS inverter, energy-saving systems, solar power systems, lighting, industrial automation, AC and DC motor drives, HVAC systems and other applications. Furthermore, its ruggedness in vibration environment, low cost, and low current sensitivity also make it suitable for portable applications.

Working Principle

IXGH72N60C3 uses a special insulation structure with the collector on the substrate’s N-type layer and the emitter on the substrate’s P-type layer. When the IGBT’s gate-controlled current is conducted between the two layers, the electrons on the N-type layer move toward the P-type layer, creating an additional layer of electrons in the P-type layer’s region. This additional layer of electrons prevents the free electrons from escaping, which in turn creates a conductive path between the collector and emitter. Thus, power can be carried through IGBT’s emitter-collector PN junction. The needed gate-controlled current is reduced and the switching time is shortened due to the negative charge accumulation effect at the P-type base.

In essence, IXGH72N60C3 is a voltage-controlled device. By adjusting the voltage of the gate, the electrons can be injected into the P-type layers. This control current enables fast switching of the device without degrading its operating parameters, thus increasing its efficiency. Furthermore, the MOS structure of the IGBT also provides better thermal performance as compared to other semiconductor devices. Since the gate terminals are controlled using a low voltage, the device can operate at lower voltages with improved cost performance, and the gate charge can be reduced to increase the device’s switching speed.

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