IXGH90N60B3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IGBTs, or insulated gate bipolar transistors, are power semiconductor transistors used in medium to high-power switching applications. The IXGH90N60B3 is a 600V/90A N-channel IGBT module from Infineon Technologies. In this article, we will explore the application fields and working principles of this particular IGBT.

Application Fields

The IXGH90N60B3 is a 600V/90A N-channel IGBT module from Infineon Technologies. This IGBT is suitable for a variety of applications, particularly those that require high power switching. Such applications include solar inverters, motor drives, welders, lighting systems, Home appliances, UPSs/ETSs and charging/discharging systems.

Due its high power switching capabilities, the IXGH90N60B3 IGBT is ideal for critical operations and processes. Its high switching frequency enables more dynamic and accurate power supply control, which is essential for high efficiency applications. The IXGH90N60B3 is also designed for use in high temperature environments, with a maximum junction temperature of 150 °C and a high absolute maximum ratings.

Furthermore, the IXGH90N60B3 IGBT’s low conduction and switching losses make it suitable for motor drives and lighting systems to deliver optimal efficiency. This IGBT also features smart protection mechanisms, such as over-temperature protection and clamp diodes that provide current limiting protection, to ensure its safety and reliability in any application.

Working Principles

An IGBT is a power semiconductor transistor that combines an insulated gate and a bipolar transistor in a single component. It works as a switch, controlling the current flow between its two terminals, or collector and emitter. The IXGH90N60B3 IGBT uses a N-channel MOSFET between its collector and emitter, and an insulated gate between the collector and the gate terminal.

When a positive voltage is applied to the IGBT’s gate terminal, a negative current flows from the collector to the emitter, which is referred to as the “on” state. This causes the current to flow from the collector to the emitter, and the IGBT is enabled. On the other hand, when a negative voltage is applied to the gate terminal, a positive current flows from the gate to the collector, which is referred to as the “off” state. This causes the IGBT to become disabled, and no current will flow in the circuit.

The IXGH90N60B3 IGBT module is designed to be highly efficient and reliable, with low conduction and switching losses. It also has high current densities and breakdown voltages, making it an ideal choice for any application that requires switching of high power demands. In addition, the IXGH90N60B3 has built-in protection circuits, such as over-temperature and over-voltage protection, for added safety and reliability.

Conclusion

In summary, the IXGH90N60B3 is an IGBT module from Infineon Technologies, suitable for medium to high-power switching applications. Its features include high current density, high switching frequency, low conduction and switching losses, high temperature operation, and protection circuits. This makes the IXGH90N60B3 best suited for solar inverters, motor drives, and lighting systems.

The specific data is subject to PDF, and the above content is for reference