JAN1N1186

Series:	Military, MIL-PRF-19500/297
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io):	35A
Voltage - Forward (Vf) (Max) @ If:	1.4V @ 110A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	10µA @ 200V
Capacitance @ Vr, F:	--
Mounting Type:	Chassis, Stud Mount
Package / Case:	DO-203AB, DO-5, Stud
Supplier Device Package:	DO-5
Operating Temperature - Junction:	-65°C ~ 175°C

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The JAN1N1186 is a single rectifier diode housed in a compact SOD-123 package. It is designed for general purpose applications such as power rectification, logic level clamping, peak current limiting, power switching, and AC-DC conversion. This diode is typically used in power distribution and energy management applications, as well as in automotive electronics such as body control modules and engine management systems.The JAN1N1186 operates under a wide range of operating voltages. It is suitable for use in automotive and industrial applications, and can operate at operating voltages of up to 45V. The diode has a relatively low forward voltage drop of 0.55V at 25°C and 0.9V at 125°C. This makes the diode ideal for applications that require low voltage drops, such as AC/DC conversion or power rectification applications. The diode also offers fast switching times, with a reverse recovery time of 3.5ns.The JAN1N1186 diode utilizes a simple working principle. The diode is constructed from two materials, one of which is semiconductor material. When a positive voltage is applied to the anode and a negative voltage is applied to the cathode, the electrons in the semiconductor material of the diode move in one direction and form a conducting pathway. This forms an electric current that flows from the anode to the cathode, while any reverse current is blocked by the diode.The working of the JAN1N1186 LED consists of two basic steps. First, the diode is biased, or supplied with an electric current. When the diode is biased, electrons from the N-side are attracted to the P-side, which creates an electric field that blocks the passage of reverse current. This enables the diode to accept forward current, but prevent any reverse current from flowing through the diode. Second, when the forward voltage across the diode exceeds a certain threshold, the electric field is weakened, allowing the electrons to move freely and form a conducting pathway through the diode.For applications that require an efficient diode with a wide operating range, the JAN1N1186 diode is an ideal choice. The diode is capable of handling up to 45V at a low forward voltage drop and fast switching times. Its working principle is also simple and reliable, which makes it suitable for many different applications.

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