Allicdata Part #: | 1086-16265-ND |
Manufacturer Part#: |
JAN1N1615R |
Price: | $ 39.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 400V 15A DO203AA |
More Detail: | Diode Standard, Reverse Polarity 400V 15A Chassis,... |
DataSheet: | JAN1N1615R Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 35.18020 |
Series: | Military, MIL-PRF-19500/162 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 15A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-203AA (DO-4) |
Operating Temperature - Junction: | -65°C ~ 150°C |
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Diodes - Rectifiers - Single
The JAN1N1615R is a 1A fast recovery diode in a standard DO-41 package. It is a type of semiconductor diode with a single rectifier for electronic p-n junction applications. It is a common device for non-nuclear power rectification applications and has a highly efficient rectifier, surpassing silicon transistors.
The JAN1N1615R has a maximum dc forward voltage drop of 1.05V and a maximum instantaneous forward current of 1A, among others. It is designed to switch pulse frequencies up to 50kHz and features fast-recovery time. Its average forward recovery is around 50ns, allowing it to switch faster than conventional diodes.
Applications
The JAN1N1615R is a common choice for a range of signal switching, voltage clamping, and rectification applications. It is suitable for precision signal switching and control, communication devices, power supply systems, and digital signal processing. Its fast switchover and low forward voltage make it ideal for use in medical equipment and industrial power devices.
In communications systems, it is frequently used in A/D converters for analog signal sampling. In power devices, the JAN1N1615R is often used in switching power supplies, computer peripherals, and DC/DC converters. Its high power efficiency and low power consumption reduce the total operating costs of these devices.
Working Principle
The JAN1N1615R is a junction semiconductor device with a p-type layer being created within the n-type material and a n-type layer being created within the p-type material. This junction creates a negatively charged area (or depletion zone) at the junction, which then prevents current flow until a potential difference is applied across the terminals. When a potential difference is applied, the current will flow through the diode.
The JAN1N1615R has a faster turn-on time than conventional diodes and is therefore able to switch quickly between the two states. This faster switch-on time allows for higher efficiency in power applications. The maximum instantaneous forward voltage of the device is 1.05V, with an average forward recovery time of about 50ns.
Conclusion
The JAN1N1615R is a semiconductor diode with a single rectifier. It features fast-recovery times, low forward voltage, and high switching frequencies, making it ideal for use in a wide range of signal switching, voltage clamping, and rectification applications. It is suitable for use in precision signal switching and control, communication devices, power supply systems, and digital signal processing. As it is efficient and inexpensive, the JAN1N1615R is a popular choice for many electronic power devices.
The specific data is subject to PDF, and the above content is for reference
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