JAN1N3029BUR-1 Allicdata Electronics
Allicdata Part #:

1086-16494-ND

Manufacturer Part#:

JAN1N3029BUR-1

Price: $ 11.17
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 24V 1W DO213AB
More Detail: Zener Diode 24V 1W ±5% Surface Mount DO-213AB (MEL...
DataSheet: JAN1N3029BUR-1 datasheetJAN1N3029BUR-1 Datasheet/PDF
Quantity: 1000
100 +: $ 10.05030
Stock 1000Can Ship Immediately
$ 11.17
Specifications
Series: Military, MIL-PRF-19500/115
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 24V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 18.2V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB (MELF, LL41)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A single Zener diode, such as the JAN1N3029BUR-1, is a two-terminal electronic component that control the flow of electrical current. It allows electricity to pass through only one direction, blocking the reverse direction. When reverse voltage is applied to the diode, it starts conducting in the forward direction for a brief period of time, before automatically shutting off. As such, its working principle is based on that of a traditional switch.

The JAN1N3029BUR-1 is a small signal diode typically used to protect TTL logic chips from transient overvoltages, such as those from electrostatic discharges or other sources. It is designed to operate in high-frequency, low-power circuits due to its very low junction capacitance (2.0 pF typical). This diode is also characterized by its very low forward voltage drop (1.35V maximum), which makes it suitable for applications where low-drop switching is required.

The JAN1N3029BUR-1 can be used for a variety of protection and switching applications. Some of its common uses include as gating and protection diode for logic level circuits; as a reverse-bias diode for voltage spike and transients clamping; as an ESD protection diode; as a means of limiting the speed of high-rate transient signals; and in other circuit switching applications, such as power MOSFET switching.

The JAN1N3029BUR-1 has an integrated Zener diode that allows a reverse-bias voltage at which the diode will come into conduction and begin to switch current; this voltage is typically in the range of 6.3-6.7V. This makes it suitable for signals in the logic level range, as it is capable of passing these signals while blocking signals above or below the designated range.

In addition to the inherent protection properties of the JAN1N3029BUR-1, it also features: a low forward voltage drop at 30 mA; a low switching capability for low-level loads; a low on-state resistance for higher efficiency in low-level load applications; and an integrated diode to protect the chip from transient overvoltage. These features make the JAN1N3029BUR-1 ideal for a wide range of applications, from switching high-speed communication lines to low-level signal protection and other protection applications.

The JAN1N3029BUR-1 is a versatile and reliable single Zener diode that can be used in a variety of protection and switching applications. With its low-power consumption, low-voltage drop and integrated diode, it is a great choice for protecting sensitive circuits and systems from transient voltages and all forms of high-frequency signals.

The specific data is subject to PDF, and the above content is for reference

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