JAN1N3044BUR-1

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The JAN1N3044BUR-1 is a single, general purpose, Silicon Zener diode, typically used in voltage regulator applications. It has a maximum power rating of 500mW, and its anode junction is composed of an oxide passivated PN junction. The device\'s breakdown voltage is specified from 4.7V to 75V, making it suitable for a wide range of circuit designs.

The design of this diode is useful for a variety of applications, such as protection from overvoltages and surges, providing reliable reverse polarity protection, and the creation of negative voltage from a positive power source. It is also used in surge protecting circuits, which prevent electronic devices from damage due to sudden voltage spikes. The device can also be used in low-voltage, high-current rectifier bridge applications.

The basic operating principle of a Zener diode is that it is able to conduct current in both directions during normal operation. During forward biasing, the diode behaves like any normal diode, with the positive anode terminal being more positive than the negative cathode terminal. When the anode voltage exceeds the reverse breakdown voltage of the Zener, the PN junction goes into reverse biasing, in which the current becomes smaller and more stable, regardless of the applied voltage.

This same principle also applies to the JAN1N3044BUR-1 where reverse breakdown occurs when the applied voltage exceeds the device\'s specified breakdown voltage. The breakdown voltage for the JAN1N3044BUR-1 has a wide range from 4.7V to 75V, making it suitable for many different voltage regulation designs. The device can also absorb a maximum power rating of 500mW, and the leakage current is typically low, resulting in an efficient power supply design.

The JAN1N3044BUR-1 has a wide range of application fields, from surge protection and reverse protection to rectification and voltage regulation. The device is characterized by its wide range of breakdown voltages and its excellent power ratings. The device\'s design is useful for a variety of applications, and its characteristics make it suitable for a wide range of circuit designs.

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