Allicdata Part #: | 1086-16807-ND |
Manufacturer Part#: |
JAN1N3671R |
Price: | $ 40.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 800V 12A DO203AA |
More Detail: | Diode Standard, Reverse Polarity 800V 12A Chassis,... |
DataSheet: | JAN1N3671R Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 36.16120 |
Series: | Military, MIL-PRF-19500/260 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 38A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-203AA (DO-4) |
Operating Temperature - Junction: | -65°C ~ 150°C |
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The JAN1N3671R device is a single-phase, medium power rectifier in a very small, flat, leadless package. It is designed for an AC to DC bridge rectifier power supply applications for which space constraints are a concern. The device is usually used in highly efficient AC/DC power supplies, such as battery chargers, AC adapters and mains adapters.
The device consists of four silicon rectifier elements, each of them having a reverse-biased current limit protection circuit. This allows for a significant current, up to 4A continuous, to flow through the diode. The JAN1N3671R has a maximum peak forward current of 8A and a reverse recovery time of 45ns.
The device has a breakdown voltage of 400V and an operating temperature range of -40°C to +125°C. The device also features an integrated over-temperature protection circuitry to protect against overloads and transient overloads. It also provides a robust protection circuit against power surges.
The JAN1N3671R operates in 3 different modes, depending on the applied voltage. In the fast recovery mode, the device offers improved efficiency and reduced power dissipation for low level switching in AC applications. In the soft recovery mode, the device is ideal for higher output power applications. Finally, in the ultra-soft recovery mode, the device has low input current and low THD levels, making it suitable for applications with higher efficiency requirements.
The working principle of the JAN1N3671R is based on the PN junction diode. The PN junction is composed of two different types of semiconductor material, one side being n-type and the other side being p-type. The two sides are connected together, forming a junction with a reverse bias voltage across it. When the voltage across the junction is reversed, the current in the diode is limited to a maximum level. This is what allows the diode to be used in a rectifier application.
The JAN1N3671R is well suited for a wide range of applications where space constraints are a concern. These include AC/DC power supplies, battery chargers, AC adapters, mains adapters and other applications that require a high current capacity. The device provides a robust protection against power surges and over-temperature conditions. Additionally, its fast, soft and ultra-soft recovery modes offer improved performance and efficiency. Thus, the JAN1N3671R makes a great choice for applications requiring a high current, space-efficient rectifier solution.
The specific data is subject to PDF, and the above content is for reference
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