Allicdata Part #: | 1086-15168-ND |
Manufacturer Part#: |
JAN1N4148-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 75V 200MA DO35 |
More Detail: | Diode Standard 75V 200mA Through Hole DO-35 |
DataSheet: | JAN1N4148-1 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | Military, MIL-PRF-19500/116 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 500nA @ 75V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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Diodes, also known as rectifiers, refer to electronic components that allow current to flow in one direction with minimal resistance and an outright blockage in the other direction. Single rectifiers are often found in power applications and also referred to as a single diode – the JAN1N4148-1 being one such example.In terms of the JAN1N4148-1\'s application field, it is a 400 mW Silicon Based Diode. Commonly used in the field of professional electronics, it is usually found in audio and RF applications, as well as providing protection for other components from voltage fluctuations. This particular single rectifier is rated with a maximum reverse voltage of 75 volts DC and a peak pulse power up to 1.0 watts.Looking at the JAN1N4148-1\'s working principle, it can be seen that this single diode structure works by utilizing the junctions between two different types of doped semiconductor materials. The diode structure is designed to allow current to flow in just one direction – a feature that is achieved by the use of forward voltage.The forward voltage is the amount of voltage required to initiate a forward current to flow through the diode, and it corresponds to the forward threshold voltage. This voltage is generated by the depletion region of the junction, which retains a negative charge – thereby rejecting electrons which would otherwise travel in the reverse direction.When conversely, the diode is operated in reverse, the gap between p-type and n-type regions increases. This widens the depletion region and prevents current from flowing. Therefore, the diode structure is able to serve as a powerful barrier for reverse current – acting as an effective rectifier that allows current to flow only in one direction.In summary, the JAN1N4148-1 diode can be seen as a professional-grade single rectifier component. This component boast a maximum reverse voltage of 75 volts DC and a peak pulse power up to 1.0 watts, and is suitable for use in a variety of applications, including audio and RF applications, as well as providing protection for other components. The working principle of the JAN1N4148-1 is founded upon the junctions between two different types of doped semiconductor materials, as well as its forward threshold voltage, which allows current to flow in only one direction when the diode is operated in forward.
The specific data is subject to PDF, and the above content is for reference
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