JAN1N4615DUR-1 Allicdata Electronics
Allicdata Part #:

1086-18271-ND

Manufacturer Part#:

JAN1N4615DUR-1

Price: $ 13.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 2.0V 500MW DO213AA
More Detail: Zener Diode 2V 500mW ±1% Surface Mount DO-213AA
DataSheet: JAN1N4615DUR-1 datasheetJAN1N4615DUR-1 Datasheet/PDF
Quantity: 1000
100 +: $ 12.01950
Stock 1000Can Ship Immediately
$ 13.36
Specifications
Series: Military, MIL-PRF-19500/435
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 2V
Tolerance: ±1%
Power - Max: 500mW
Impedance (Max) (Zzt): 1250 Ohms
Current - Reverse Leakage @ Vr: 2.5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA
Description

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The JAN1N4615DUR-1 is a single, high-temperature, center-zoned, N-type, avalanche-rated, surge-protected Zener diode. It is designed to provide very high peak current protection with minimal voltage drop.

The JAN1N4615DUR-1 is a popular choice for many applications, including automotive, telecommunications, industrial, and consumer electronics. This diode can be used in a variety of ways, such as for voltage clamping and regulation, and protection from electrostatic discharge.

This diode has a breakdown voltage that is stable over temperature and time, making it well-suited for use in temperature-sensitive applications. It is also very efficient, with a low reverse leakage current, and has a wide operating temperature range. This diode is available in a variety of packages options.

The working principle of the JAN1N4615DUR-1 is based on a reverse breakdown of the two P-N junction layers. When a voltage across the two junction layers reaches the breakdown voltage, electrons are accelerated across the junction and generate a large number of charge carriers, resulting in an avalanche breakdown. This breakdown will continue as long as the voltage is present, leading to a larger current flow through the diode.

The operation of the JAN1N4615DUR-1 happens in two layers. The first layer is a main Zener layer, which is composed of P-type material. This layer controls the breakdown voltage of the device and is responsible for regulating the voltage across the device. The second layer is an avalanche layer, which consists of N-type material. This layer controls the maximum current flow through the device and helps ensure that the device is immune to voltage spikes or transients.

The JAN1N4615DUR-1 is an excellent choice when looking for a reliable, high-current Zener diode. Its wide operating temperature range, high surge protection capabilities, and stability over time and temperature make it suitable for a variety of applications. Its ability to handle high peak currents, with minimal voltage drop, makes it a great choice for both consumer electronics and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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