Allicdata Part #: | JAN1N4969USS-ND |
Manufacturer Part#: |
JAN1N4969US |
Price: | $ 6.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | 30V ZENER 500W |
More Detail: | Zener Diode |
DataSheet: | JAN1N4969US Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 6.05967 |
Series: | * |
Part Status: | Active |
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A zener diode is an electronic component which, when reversed-biased, conducts current as any ordinary diode, but like other types of diodes, it breaks down when the conducting current exceeds a certain threshold. The breakdown voltage, or zener voltage, of the diode is determined by the material and structure of the diode. The Zener diode model JAN1N4969US is a typical single zener diode, meaning that it can handle a single zener voltage.
JAN1N4969US Application Field
The JAN1N4969US is a single Zener diode commonly used in consumer electronics, such as desktop computers and car audio systems. This diode is also popular for more industrial applications, such as in communications equipment where stability and protection against extreme voltages and transients is desired. In an RF environment, the Zener diode can be used as a temperature-independent voltage regulator and to provide a stable voltage reference.
The JAN1N4969US is also popular in power supply design, voltage switching and voltage detection circuits because of its low noise, high efficiency and low power dissipation characteristics. In addition, it can be used as a protection diode, such as in the input stage of a lead-acid battery charger. It can protect against overvoltage and short-circuit currents by providing a low resistance discharge path for the excess current.
JAN1N4969US Working Principle
The pure semiconductor material from which the JAN1N4969US is fabricated is generally a single wafer of silicon, or an alloy of silicon and germanium. When the diode is forward-biased, the electric field applied will cause a current flow. However, when the diode is reversed biased, electric field-assisted breakdown occurs and the current starts to flow.
The Zener breakdown voltage is determined by the chemical composition of the semiconductor material and its atomic density. The breakdown voltage is usually determined by the peak electric field, or avalanche breakdown, which is expected to occur inside the diode\'s p-n junction. When the breakdown voltage is exceeded, the Zener effect occurs and the diode starts to conduct.
The JAN1N4969US is designed to prevent excess voltage from damaging other components such as integrated circuits by clamping the voltage when it exceeds a certain level. It will conduct in the reverse direction only when its breakdown voltage is exceeded, and it will remain in a non-conducting state otherwise.
The JAN1N4969US is also well-suited for high-frequency applications due to its characteristic low noise and high efficiency. It is available in multiple configurations, including surface mount and axial lead types, and it can be used in either through-hole or surface mount applications. Thanks to its wide range of features and benefits, the JAN1N4969US remains a popular choice among designers of all sorts of electronic equipment.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6167A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 86.6V 151.3V C ... |
JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
JAN1N6173A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 152V 273V C AXI... |
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JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
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JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
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